PD - 94574B
HEXFET
®
Power MOSFET
l
IRF6607
Qg(typ.)
50nC
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface
Mount Techniques
V
DSS
30V
R
DS(on)
max
3.3mΩ@V
GS
= 10V
4.4mΩ@V
GS
= 4.5V
MT
MX
MT
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
Description
The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±12
94
27
22
220
3.6
2.3
42
0.029
-40 to + 150
Units
V
A
g
g
c
W
W/°C
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
fj
gj
hj
ij
Typ.
–––
12.5
20
–––
–––
Max.
35
–––
–––
3.0
1.0
Units
°C/W
Notes
through
are on page 11
www.irf.com
1
4/8/04
IRF6607
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min. Typ. Max. Units
30
–––
–––
–––
1.3
–––
–––
–––
–––
–––
29
2.5
3.4
–––
-5.3
–––
–––
–––
–––
–––
–––
50
13
4.0
16
18
20
30
0.6
60
8.0
32
13
6930
1260
510
–––
–––
3.3
4.4
2.0
–––
30
50
100
100
-100
–––
75
–––
–––
–––
–––
–––
–––
1.9
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
S
nA
V
mV/°C
µA
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
e
= 20A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 70°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 15V, I
D
= 20A
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
Clamped Inductive Load
Ãe
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
51
20
0.36
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
1.0
46
54
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
27
A
220
1.3
69
81
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A
di/dt = 100A/µs
e
e
2
www.irf.com
IRF6607
1000
TOP
VGS
12V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
2.0V
1000
TOP
VGS
12V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
2.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
2.0V
0.1
2.0V
20µs PULSE WIDTH
Tj = 150°C
1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
I
D
= 25A
ID, Drain-to-Source Current
(Α
)
100.00
R
DS(on)
, Drain-to-Source On Resistance
T J = 150°C
1.5
10.00
(Normalized)
1.0
T J = 25°C
1.00
0.5
VDS = 15V
20µs PULSE WIDTH
0.10
2.0
2.5
3.0
3.5
4.0
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF6607
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6.0
ID= 20A
VGS , Gate-to-Source Voltage (V)
5.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
10000
4.0
Ciss
Coss
1000
3.0
Crss
2.0
1.0
100
1
10
100
0.0
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10.00
10
100µsec
1msec
1.00
T J = 25°C
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
10msec
VGS = 0V
0.10
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, Source-to-Drain Voltage (V)
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6607
30
2.0
25
VGS(th) Gate threshold Voltage (V)
20
1.5
I
D
, Drain Current (A)
ID = 250µA
15
10
1.0
5
0
25
50
75
100
125
150
0.5
T
A
, Ambient Temperature (°C)
-75
-50
-25
0
25
50
75
100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
Thermal Response
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
A
10
100
0.1
J
= P
DM
x Z
thJA
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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