66099
RADIATION TOLERANT OPTOCOUPLER
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
Meets or exceeds MIL-PRF-19500 radiation
requirements
Current Transfer Ratio-150% typical
1kVdc electrical input to output isolation
Base lead provided for conventional transistor
biasing
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
Radiation tests performed on the
66099
optocoupler have shown that the electrical performance of the device after irradiation
is an order of magnitude better that the 4N49 optocouplers. The 66099 Optocoupler consist of a GaAIA’s LED optically
coupled to a photodiode detector circuit mounted in a hermetic TO-5 package. Figures 1 and 2 illustrate the radiation
performance of the device. Micropac’s 66099 performs beyond the levels shown in MIL-PRF-19500 for a level H (total
6
12
2
dose>10 rads, neutron fluence >1X10
n/cm ) RHA designation.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ............................................................................. 240°C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1) ...............................................................................................................................80mW
Reverse Input Voltage ............................................................................................................................................................. 3V
Collector-Base Voltage ........................................................................................................................................................... 40V
Collector-Emitter Voltage ....................................................................................................................................................... 40V
Emitter-Base Voltage................................................................................................................................................................ 4V
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation (see Note 2) ..................................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/°C above 25°C.
2. Derate linearly 3.0 mW/°C above 25°C.
Package Dimensions
0.022Ø [5.08]
0.040 [1.02]
MAX.
6 LEADS
Schematic Diagram
5
C
3
0.305 [7.75]
0.335 [8.51]
0.016Ø [0.41]
0.019Ø [0.48]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
5
3
2
1
6
7
0.045 [1.14]
0.029 [0.73]
45°
0.034 [0.864]
0.028 [0.711]
E
7
B
1
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
66099
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 18
INPUT DIODE CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified.
PARAMETER
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
SYMBOL
I
R
V
F
MIN
0.8
TYP
MAX
100
2
UNITS
µA
V
TEST CONDITIONS
V
R
= 2V
I
F
= 10mA
OUTPUT TRANSISTOR CHARACTERISTICS
T
A
= 25
°
C unless otherwise noted
PARAMETER
SYMBOL
MIN
TYP
MAX
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
40
40
4
100
UNITS
V
V
V
nA
TEST CONDITIONS
I
C
= 100
µ
A, I
F
= 0
I
C
= 1mA, I
B
= 0, I
F
= 0
I
C
= 0mA, I
E
= 100
µ
A, I
F
= 0
V
CE
= 20V
COUPLED CHARACTERISTICS
T
A
= 25
°
C unless otherwise noted
PARAMETER
SYMBOL
MIN
TYP
Current Transfer Ratio
Collector-Emitter Saturation Voltage
Input-Output Isolation Current
Rise Time
Fall Time
CTR
V
CE(SAT)
MAX
0.3
100
20
20
UNITS
%
V
nA
µ
s
TEST CONDITIONS
V
CE
= 1V, I
F
= 10mA
I
F
= 20mA, I
C
= 10mA
V
I-O
= 1000V
V
CC
= 10V, I
F
= 10mA,
R
L
= 100
Ω
V
CC
= 10V, I
F
= 10mA,
R
L
= 100
Ω
100
I
ISO
t
r
t
f
µ
s
Figure 1: Mii Optocoupler Neutron Fluence Response
0
-10
Figure 2: Mii Optocoupler Total Dose Radiation Response
Normalized CTR Versus Total Dose Rad.
6 6 0 9 9 D e v ic e s ( Vc e = 5 V . If 2 m A )
1
0 .9 9
0 .9 8
0 .9 7
0 .9 6
-20
CTR Degradation (%)
-30
-40
-50
-60
-70
-80
-90
-100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Normalized CTR
0 .9 5
0 .9 4
0 .9 3
0 .9 2
0 .9 1
0 .9
0 .8 9
0 .8 8
0 .8 7
0 .8 6
0 .8 5
0 .8 4
0
20
50
200
Fluence (xE12 Particles/SQ. cm )
Total Dose Radiation (x10^3 Rad. (Si))
RHA LEVEL
DESIGNATOR
/
M
D
R
H
RADIATION AND
TOTAL DOSE
(rads)
No RHA
3000
10
10
10
4
5
6
LEVEL OF THE
NEUTRON FLUENCE
2
(n/cm )
No RHA
2x10
1x10
12
12
12
12
2x10
1x10
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
Input Current, Low Level
Input Current, High Level
Operating Temperature
PART NUMBER
66099-003
66099-101
66099-103
66099-105
SYMBOL
I
FL
I
FH
T
A
MIN
0
10
-55
MAX
100
20
100
UNITS
µ
A
mA
°
C
SELECTION GUIDE
PART DESCRIPTION
Single Channel Commercial Optocoupler (0 to 70°C)
Single Channel Optocoupler with TX screening plus QCI (Group A, B & C)
Single Channel Optocoupler with TX screening plus Group A
Single Channel Optocoupler with TXV screening plus Group A
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E.Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales.com
3 - 19
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