GU-E PhotoMOS (AQW414EH)
General use and economy type.
DIP (2 Form B) 8-pin type.
Reinforced insulation 5,000V
type.
FEATURES
9.86
.388
6.4
.252
3.2
.126
9.86
.388
6.4
.252
2.9
.114
TESTING
GU-E PhotoMOS
(AQW414EH)
control of low-level analog signals without
distortion.
5. High sensitivity, high speed
response.
Can control a maximum 0.13 A load
current with a 5 mA input current. Fast
operation speed of 0.8 ms (typical).
6. Low-level off state leakage current
mm
inch
1
2
3
4
8
7
6
5
1. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation
distance between inputs and outputs.
Con-forms to EN41003, EN60950
(reinforced insulation).
2. Compact 8-pin DIP size
The device comes in a compact
(W)6.4
×
(L)9.86
×
(H)3.2 mm
(W).252
×
(L).388
×
(H).126 inch,
8-pin DIP
size (through hole terminal type).
3. Applicable for 2 Form B use as well
as two independent 1 Form B use
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
TYPES
Part No.
Output rating*
Type
I/O isolation
voltage
Load
voltage
AC/DC
type
Reinforced
5,000 V
Load
current
Through hole
terminal
Tube packing style
Surface-mount terminal
Tape and reel packing style
Picked from the Picked from the
1/2/3/4-pin side 5/6/7/8-pin side
AQW414EHAX
AQW414EHAZ
Tube
1 tube contains
40 pcs.
1 batch contains
400 pcs.
Packing quantity
Tape and
reel
400 V
100 mA
AQW414EH
AQW414EHA
1,000 pcs.
*Indicate the peak AC and DC values.
Note:
For space reasons, the SMD terminal shape indicator "A" and the package type indicator "X" and "Z" are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C
77
°
F)
Item
LED forward current
Input
LED reverse voltage
Peak forward current
Power dissipation
Load voltage (peak AC)
Output
Continuous load current
Symbol
I
F
V
R
I
FP
P
in
V
L
I
L
I
peak
P
out
P
T
V
iso
T
opr
T
stg
AQW414EH (A)
50mA
5V
1A
75mW
400 V
0.1 A (0.13 A)
0.3 A
800mW
850mW
5,000 V AC
–40
°
C to +85
°
C
–40
°
F to +185
°
F
–40
°
C to +100
°
C
–40
°
F to +212
°
F
Non-condensing at low temperatures
Peak AC, DC
( ): in case of using only 1 channel.
100 ms (1 shot), V
L
= DC
Remarks
f =100 Hz, Duty factor = 0.1%
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Temperature
limits
Operating
Storage
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW414EH)
2. Electrical characteristics (Ambient temperature: 25
°
C
77
°
F)
Item
LED operate (OFF)
current
Input
LED reverse (ON)
current
LED dropout voltage
On resistance
Output
Off state leakage
current
Turn on time*
Turn off time*
I/O capacitance
Initial I/O isolation
resistance
Maximum
Maximum
Typical
Maximum
Typical
Maximum
Typical
Maximum
Minimum
I
Leak
T
off
T
on
C
iso
R
iso
Typical
Maximum
Minimum
Typical
Typical
Maximum
Typical
R
on
Symbol
I
Foff
I
Fon
V
F
AQW414EH (A)
1.3mA
3.0mA
0.4mA
1.2mA
1.25 (1.14 V at I
F
=5mA)
1.5V
26
Ω
35
Ω
10
µ
A
0.8ms
3.0ms
0.2ms
1.0ms
0.8pF
1.5pF
1,000M
Ω
Condition
I
L
=Max.
I
L
=Max.
I
F
=50mA
I
F
=0mA
I
L
=Max.
Within 1 s on time
I
F
=5mA
V
L
=Max.
I
F
=0mA
➝
5mA
I
L
=Max.
I
F
=5mA
➝
0mA
I
L
=Max.
f =1MHz
V
B
=0V
500V DC
For type of connection
*Operate/Reverse time
Transfer charac-
teristics
Note: Recommendable LED forward current I
F
= 5 to 10mA.
Input
Output
10%
90%
Toff
Ton
I
For Dimensions
I
For Schematic and Wiring Diagrams
I
For Cautions for Use
REFERENCE DATA
1. Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
200
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
3
Operate (OFF) time, ms
2.5
2
1.5
1
0.5
0
Load current, mA
150
Using only 1 channel
On resistance,
Ω
40
30
100
Using 2 channels
20
50
10
0
–40 –20
0
20
40
60
8085 100
Ambient temperature,
°C
0
–40
–20
0
20
40
60
8085
–40
–20
0
20
40
60
8085
Ambient temperature,
°C
Ambient temperature,
°C
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW414EH)
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.8
LED operate current, mA
Reverse (ON) time, ms
5. LED operate current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
6. LED turn off current vs. ambient temperature
characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
LED turn off current, mA
4
4
0.6
3
3
0.4
2
2
0.2
1
1
0
–40
–20
0
20
40
60
8085
0
–40
–20
0
20
40
60
8085
0
–40
–20
0
20
40
60
8085
Ambient temperature,
°C
Ambient temperature,
°C
Ambient temperature,
°C
7. LED dropout voltage vs. ambient
temperature characteristics;
LED current: 5 to 50 mA
1.5
LED dropout voltage, V
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25
°
C
77
°
F
140
120
100
80
60
40
20
–5 –4 –3 –2 –1
Current, mA
1 2 3 4
–20
Voltage, V
–40
–60
–80
–100
–120
–140
5
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25
°
C
77
°
F
Off state leakage current, A
10
–3
10
–6
10
–9
10
–12
0
20
40
60
80
Load voltage, V
100
–40
–20
0
20
40
60
8085
Ambient temperature,
°C
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
°
C
77
°
F
3.5
Operate (OFF) time, ms
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25
°
C
77
°
F
0.5
Reverse (ON) time, ms
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25
°
C
77
°
F
120
Output capacitance, pF
100
80
60
40
20
0
3
2.5
2
1.5
1
0.4
0.3
0.2
0.1
0.5
0
0
0
10
50
20
30
40
LED forward current, mA
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LED forward current, mA
Applied voltage, V
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
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