DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
M3D071
BAS70 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1999 Jun 01
2001 Oct 11
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES
•
Low forward current
•
High breakdown voltage
•
Guard ring protected
•
Small plastic SMD package
•
Low diode capacitance.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
Top view
BAS70 series
PINNING
DESCRIPTION
PIN
BAS70
(see Fig.1b)
1
2
3
4
a
1
n.c.
k
1
−
SOT23
BAS70-04
(see Fig.1c)
a
1
k
2
k
1
, a
2
−
BAS70-05
(see Fig.1d)
a
1
a
2
k
1
, k
2
−
BAS70-06
(see Fig.1e)
k
1
k
2
a
1
, a
2
−
SOT143B
BAS70-07
(see Fig.2)
k
1
k
2
a
2
a
1
handbook, 2 columns
3
handbook, 2 columns
3
2
MGC485
1
1
2
c. BAS70-04
handbook, 2 columns
MGC482
3
2
MGC484
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 small
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B small
plastic SMD package.
MARKING
TYPE NUMBER
BAS70
BAS70-04
BAS70-05
BAS70-06
BAS70-07
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
MARKING
CODE
(1)
73∗
74∗
75∗
76∗
77∗
a. Simplified outline SOT23.
1
d. BAS70-05.
handbook, 2 columns
3
2
n.c.
MGC483
handbook, 2 columns
3
2
MGC486
1
1
b. BAS70 single diode.
e. BAS70-06.
Fig.1 Simplified outline (SOT23) and symbols.
handbook, halfpage
4
3
4
3
1
1
Top view
2
2
MAM194
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
2001 Oct 11
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
−
−
−
−
−65
−
−65
PARAMETER
CONDITIONS
BAS70 series
MIN.
MAX.
UNIT
70
70
70
100
+150
150
+150
V
mA
mA
mA
°C
°C
°C
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
I
R
τ
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
reverse current
charge carrier life time (Krakauer
method)
diode capacitance
V
R
= 50 V; note 1; see Fig.4
V
R
= 70 V; note 1; see Fig.4
I
F
= 5 mA
f = 1 MHz; V
R
= 0; see Fig.6
410
750
1
100
10
100
2
mV
mV
V
nA
µA
ps
pF
PARAMETER
CONDITIONS
MAX.
UNIT
2001 Oct 11
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
10
2
IF
(mA)
10
1
1
10
1
10
1
(1)
10
2
(2) (3) (4)
10
3
0
20
40
MRA803
BAS70 series
10
2
IR
(µA)
10
(1)
MRA805
(2)
(3)
10
2
0
0.2
0.4
0.6
0.8
VF (V)
1
60
VR (V)
80
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
(1) T
amb
= 150
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Forward current as a function of forward
voltage; typical values.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
10
3
rdif
(Ω)
10
2
MGL762
2
Cd
(pF)
1.5
MRA804
1
10
0.5
1
10
−1
0
1
10
IF (mA)
10
2
0
20
40
60
VR (V)
80
f = 10 kHz.
f = 1 MHz.
Fig.5
Differential forward resistance as a function
of forward current; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
2001 Oct 11
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
BAS70 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 11
5
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