New Product
TV134T...S4PV Series
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressor
Bare Die (134 mils x 134 mils)
a
c
FEATURES
e
• Junction passivation optimized
anisotropic rectifier technology
design
passivated
• 3000 W peak pulse power capability with a 10/1000 μs
waveform in equivalent package
d b
A
(2)
C
(1)
• Unidirectional polarity only
CIRCUIT DIAGRAM
A
(2)
C
(1)
Notes
(1)
Front metallization side: Cathode
(2)
Back metallization side: Anode
MECHANICAL DATA
DIMENSIONS in inches (millimeters)
DEVICE
(1)
TYPICAL TOTAL METAL THICKNESS
FRONT SIDE C
METAL
Ni/Au
THICKNESS
0.75 μm
BACK SIDE A
METAL
Ni/Au
THICKNESS
0.75 μm
ASSEMBLY
CHIP SIZE
a, b
min.
max.
0.134
(3.404)
SOLDERABLE
c, d
min.
0.120
(3.048)
max.
0.122
(3.099)
CHIP
THICKNESS
e
min.
0.011
(0.279)
max.
0.013
(0.330)
TV134T...S4PV
Solderable
0.132
(3.353)
Note
(1)
Refer to Device Code definition
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
FINISH GOOD (for reference not guarantee for bare die)
BREAKDOWN
TEST
VOLTAGE
V
BR (1)
AT I
T
(V) CURRENT
I
T
(mA)
MIN.
TV134T010S4PV
TV134T011S4PV
TV134T012S4PV
TV134T013S4PV
TV134T014S4PV
TV134T015S4PV
TV134T016S4PV
TV134T017S4PV
TV134T018S4PV
TV134T020S4PV
TV134T022S4PV
TV134T024S4PV
TV134T026S4PV
TV134T028S4PV
TV134T030S4PV
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
MAX.
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAXIMUM
STAND-OFF REVERSE
VOLTAGE
LEAKAGE
V
WM
(V)
AT V
WM
I
D
(μA)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
(2)
V
C
AT I
PPM
(V)
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
(A)
176
165
151
140
129
123
115
109
103
92.6
84.5
77.1
71.3
66.1
62.0
OPERATING
JUNCTION
TEMPERATURE
RANGE
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
PACKAGE
EQUIVALENT
PRODUCT
(3)
3KASMC10A
3KASMC11A
3KASMC12A
3KASMC13A
3KASMC14A
3KASMC15A
3KASMC16A
3KASMC17A
3KASMC18A
3KASMC20A
3KASMC22A
3KASMC24A
3KASMC26A
3KASMC28A
3KASMC30A
DEVICE
Document Number: 89224
Revision: 20-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
TV134T...S4PV Series
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
FINISH GOOD (for reference not guarantee for bare die)
BREAKDOWN
TEST
VOLTAGE
V
BR (1)
AT I
T
(V) CURRENT
I
T
(mA)
MIN.
TV134T033S4PV
TV134T036S4PV
TV134T040S4PV
TV134T043S4PV
36.7
40.0
44.4
47.8
MAX.
40.6
44.2
49.1
52.8
1
1
1
1
MAXIMUM
STAND-OFF REVERSE
VOLTAGE
LEAKAGE
V
WM
(V)
AT V
WM
I
D
(μA)
33
36
40
43
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
(2)
V
C
AT I
PPM
(V)
53.3
58.1
64.5
69.4
(A)
56.3
51.6
46.5
43.2
OPERATING
JUNCTION
TEMPERATURE
RANGE
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
- 65 °C to + 185 °C
PACKAGE
EQUIVALENT
PRODUCT
(3)
3KASMC33A
3KASMC36A
3KASMC40A
3KASMC43A
DEVICE
Notes
(1)
Pulse test: t
50 ms
p
(2)
Non-repetitive current pulse, per fig. 1
(3)
Package equivalent product quality level information will provide per customer request but only for reference no guarantee bare die can meet
the same
PACKAGING
DEVICE
TV134T...S4PV
PACKAGE CODE
V
DELIVERY MODE
12 mm tape/8 mm pitch, 7" diameter plastic tape and reel
BASE QUANTITY
3000
CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
150
t
r
= 10 μs
Peak Value
I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100
Half Value - I
PP
I
PPM
2
50
10/1000 μs Waveform
as Defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 1 - Pulse Waveform
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 89224
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
TV134T...S4PV Series
Vishay General Semiconductor
DEVICE CODE
TV
1
1
2
3
4
5
6
7
8
134
2
T
3
010
4
S
5
4
6
P
7
V
8
-
-
-
-
-
-
-
-
Transient Voltage Suppressor
Die dimensions in mils
Patented PAR TVS
Breakdown voltage (V
BR
)
Wafer diameter in inches
Quality level code
Packaging (see Packaging table)
P = Packaged die, high reliability grade
(1)
O = Packaged die, commercial grade
(1)
N = Non packaged die
(2)
B = Named as breakdown voltage (V
BR
)
T = Named as stand-off voltage (V
WM
)
L = Load dump rectifier
A = Bondable
S = Solderable
Chip surface metallization (see Mechanical Data table)
4 = 4" wafer
6 = 6" wafer
Notes
(1)
Packaged die
• Existing die in qualified package
(2)
Non packaged die
• Existing fab. process
• Non standard die metal
• Die metal has been qualified
• No production in packaged form
Document Number: 89224
Revision: 20-May-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Revision: 12-Mar-12
1
Document Number: 91000