BUK98150-55A
19 March 2014
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
•
•
•
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
3. Applications
•
•
•
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
V
GS
= 5 V; T
sp
= 25 °C;
Fig. 2; Fig. 3
T
sp
= 25 °C;
Fig. 1
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12;
Fig. 13
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 5 V; I
D
= 5 A; V
DS
= 44 V;
T
j
= 25 °C;
Fig. 14
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 5.5 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
-
-
22
mJ
-
2.8
-
nC
Min
-
-
-
Typ
-
-
-
Max
55
5.5
8
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
-
-
116
128
161
137
150
mΩ
mΩ
mΩ
Nexperia
BUK98150-55A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
drain
G
Simplified outline
4
Graphic symbol
D
1
2
3
SC-73 (SOT223)
mbb076
S
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK98150-55A
BUK98150-55A/CU
SC-73
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
SOT223
Type number
7. Marking
Table 4.
Marking codes
Marking code
915055A
915055
Type number
BUK98150-55A
BUK98150-55A/CU
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
sp
= 25 °C;
Fig. 1
T
sp
= 25 °C; V
GS
= 5 V;
Fig. 2; Fig. 3
T
sp
= 100 °C; V
GS
= 5 V;
Fig. 2
I
DM
BUK98150-55A
Conditions
T
j
≥ 25 °C; T
j
≤ 150 °C
R
GS
= 20 kΩ
Min
-
-
-15
-
-
-
-
©
Max
55
55
15
8
5.5
3
22
Unit
V
V
V
W
A
A
A
peak drain current
T
sp
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
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Nexperia B.V. 2017. All rights reserved
Product data sheet
19 March 2014
2 / 13
Nexperia
BUK98150-55A
N-channel TrenchMOS logic level FET
Symbol
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Parameter
storage temperature
junction temperature
Conditions
Min
-55
-55
Max
150
150
Unit
°C
°C
Source-drain diode
source current
peak source current
T
sp
= 25 °C
pulsed; t
p
≤ 10 µs; T
sp
= 25 °C
I
D
= 5.5 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
Fig. 4
[1][2][3][4]
-
-
-
5.5
22
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
[1]
[2]
[3]
[4]
120
P
der
(%)
80
-
22
-
mJ
J
Value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.
Repetitive avalanche rating limited by an average junction temperature of 145 °C.
Refer to application note AN10273 for further information.
03aa17
6
I
D
(A)
4
003aab629
40
2
0
0
50
100
150
T
sp
(°C)
200
0
25
50
75
100
125
150
T
sp
(°C)
Fig. 1.
Normalized total power dissipation as a
function of solder point temperature
Fig. 2.
Continuous drain current as a function of solder
point temperature
BUK98150-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 March 2014
3 / 13
Nexperia
BUK98150-55A
N-channel TrenchMOS logic level FET
10
2
I
D
(A)
10
003aab630
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 µ s
100 µ s
1 ms
10 ms
100 ms
10
2
1
DC
10
-1
1
10
V
DS
(V)
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
I
AL
(A)
1
(1)
003aab639
(2)
(3)
10
-1
10
-2
10
-3
10
-2
10
-1
1 t (ms) 10
AL
Fig. 4.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
Conditions
Fig. 5
Min
-
Typ
-
Max
15
Unit
K/W
BUK98150-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 March 2014
4 / 13
Nexperia
BUK98150-55A
N-channel TrenchMOS logic level FET
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
10
2
Z
th(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1
0.05
0.02
Conditions
Min
-
Typ
120
Max
-
Unit
K/W
03na30
P
10
- 1
single shot
t
p
10
- 2
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
δ=
t
p
T
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to solder point as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 150 °C;
Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 11
I
DSS
drain leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 150 °C
I
GSS
gate leakage current
V
GS
= 15 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -15 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 5 A; T
j
= 150 °C;
Fig. 12; Fig. 13
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 5 A; T
j
= 25 °C
BUK98150-55A
All information provided in this document is subject to legal disclaimers.
Min
50
55
1
0.6
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
-
-
116
©
Max
-
-
2
-
2.3
10
500
100
100
276
161
137
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
5 / 13
Static characteristics
V
GS(th)
Nexperia B.V. 2017. All rights reserved
Product data sheet
19 March 2014
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