Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra fast switching speed
•
Low forward voltage
•
Fast recovery time
•
Guard ring protected
•
Small plastic SMD package
•
Capability of absorbing very high
surge current.
APPLICATIONS
•
Rectification
•
Circuit protection
•
Polarity protection
•
Switched-mode power supplies.
1
2
3
MAM421
1PS74SB23
PINNING
PIN
1
2
3
4
5
6
anode
cathode
anode
anode
cathode
anode
DESCRIPTION
handbook, halfpage
6
5
4
2, 5
1, 3,
4, 6
DESCRIPTION
Planar Schottky barrier diode
encapsulated in an SC-74 (SOT457)
small plastic SMD package.
Marking code:
P1.
Top view
Fig.1 Simplified outline SC-74 (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
I
RSM
T
stg
T
j
Note
1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
t
p
=
8.3 ms; half sinewave;
JEDEC method; note 1
t
p
= 100
µs
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
25
1
25
0.5
+150
125
UNIT
V
A
A
A
°C
°C
2001 Aug 27
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
PARAMETER
forward voltage
reverse current
diode capacitance
I
F
= 1 A
V
R
= 20 V; note 1; see Fig.3
V
R
= 25 V; note 1; see Fig.3
f = 1 MHz; V
R
= 4 V; see Fig.4
CONDITIONS
I
F
= 100 mA
1PS74SB23
TYP.
260
400
80
−
100
MAX.
300
450
500
1
−
UNIT
mV
mV
µA
mA
pF
VALUE
250
UNIT
K/W
2001 Aug 27
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
MBK572
1PS74SB23
handbook, halfpage
10
4
handbook, halfpage
10
5
MHB970
(1)
(2)
(3)
IF
(mA)
10
3
IR
(µA)
10
4
10
3
10
2
(1)
(2)
(3)
(4)
10
2
(4)
10
10
1
0
0.2
0.4
0.6
0.8
VF (V)
1.0
1
0
10
20
VR (V)
30
(1)
(2)
(3)
(4)
T
amb
= 125
°C.
T
amb
= 100
°C.
T
amb
= 75
°C.
T
amb
= 25
°C.
(1) T
amb
= 125
°C.
(2) T
amb
= 100
°C.
(3) T
amb
= 75
°C.
(4) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
3
handbook, halfpage
MBK571
Cd
(pF)
10
2
10
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Aug 27
4
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