PD - 97157
IRLML0100TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 10V)
HEXFET
®
Power MOSFET
100
± 16
220
235
V
V
m
m
G 1
3 D
S
2
:
:
R
DS(on) max
(@V
GS
= 4.5V)
Micro3
TM
(SOT-23)
IRLML0100TRPbF
Application(s)
•
Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
results in
⇒
Benefits
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
100
1.6
1.3
7.0
1.3
0.8
0.01
± 16
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
11/24/09
IRLML0100TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100
–––
–––
–––
1.0
–––
–––
–––
–––
–––
5.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
190
178
–––
–––
–––
–––
–––
1.3
–––
2.5
0.5
1.2
2.2
2.1
9.0
3.6
290
27
13
–––
–––
235
220
2.5
20
250
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
S
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 1.3A
V
GS
= 10V, I
D
V
DS
= V
GS
, I
D
= 25µA
V
DS
=100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
V
DS
= 50V, I
D
= 1.6A
I
D
= 1.6A
V
DS
=50V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
µA
d
= 1.6A
d
d
=50V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
13
1.1
A
7.0
1.3
30
20
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.1A, V
GS
= 0V
T
J
= 25°C, V
R
= 50V, I
F
=1.1A
di/dt = 100A/µs
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
d
d
2
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IRLML0100TRPbF
100
≤60µs
PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
100
≤60µs
PULSE WIDTH
Tj = 150°C
ID, Drain-to-Source Current (A)
TOP
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
10
BOTTOM
10
BOTTOM
1
1
2.25V
0.1
2.25V
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
ID = 1.6A
VGS = 10V
2.0
1
TJ = 150°C
1.5
0.1
TJ = 25°C
1.0
VDS = 50V
≤60µs
PULSE WIDTH
0.01
1.5
2.0
2.5
3.0
3.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLML0100TRPbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
VGS, Gate-to-Source Voltage (V)
ID= 1.6A
12
1000
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
Ciss
100
8
Coss
Crss
10
4
0
1
1
10
VDS , Drain-to-Source Voltage (V)
100
0
1
2
3
4
5
6
7
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
10
TJ = 150°C
1
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
100µsec
1
1msec
ISD, Reverse Drain Current (A)
0.1
TJ = 25°C
VGS = 0V
0.01
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10msec
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML0100TRPbF
2.0
V
DS
V
GS
ID , Drain Current (A)
1.5
R
D
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
1.0
0.5
Fig 10a.
Switching Time Test Circuit
V
DS
0.0
25
50
75
100
125
150
90%
TA , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( ZthJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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