IRFP4768PbF
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
G
S
D
V
DSS
R
DS(on) typ.
max
250V
14.5m
17.5m
93A
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
D
G
DS
TO-247AC
G
D
S
Gate
Standard Pack
Form
Quantity
Tube
25
Drain
Source
Base part number
IRFP4768PbF
Package Type
TO-247AC
Orderable Part Number
IRFP4768PbF
Max.
93
66
370
520
3.4
± 20
24
-55 to + 175
°C
300
10 lbf·in (1.1 N·m)
770
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Units
A
W
W/°C
V
V/ns
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
E
AR
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
1
2016-12-12
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Min.
–––
–––
–––
Min.
250
–––
–––
3.0
–––
–––
–––
–––
–––
IRFP4768PbF
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.20 ––– V/°C Reference to 25°C, I
D
= 5mA
14.5 17.5 m V
GS
= 10V, I
D
= 56A
––– 5.0
V V
DS
= V
GS
, I
D
= 250µA
–––
20
V
DS
= 250 V, V
GS
= 0V
µA
––– 250
V
DS
= 250V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
0.71 –––
V
DS
= 50V, I
D
=56A
I
D
= 56A
V
DS
= 125V
nC
V
GS
= 10V
S
V
DD
= 163V
I = 56A
ns
D
R
G
= 1.0
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, VDS = 0V to 200V
V
GS
= 0V, VDS = 0V to 200V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
100 ––– –––
––– 180 270
–––
52
–––
–––
72
–––
––– 108 –––
–––
36
–––
––– 160 –––
–––
57
–––
––– 110 –––
––– 10880 –––
––– 700 –––
––– 210 –––
–––
–––
510
830
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
t
rr
Q
rr
I
RRM
t
on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
93
A
370
1.3
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
T
J
= 25°C,I
S
= 56A,V
GS
= 0V
––– 180 –––
T
J
= 25°C
V
DD
= 200V
ns
––– 200 –––
T
J
= 125°C
I
F
= 56A,
––– 1480 –––
T
J
= 25°C di/dt = 100A/µs
nC
––– 2260 –––
T
J
= 125°C
–––
16
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
starting T
J
= 25°C, L = 0.50mH, R
G
= 25, I
AS
= 56A, V
GS
=10V. Part not recommended for
use above this value.
I
SD
56A,
di/dt
950A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is
measured at T
J
approximately 90°C
R
JC
value
shown is at time zero.
2
2016-12-12
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
IRFP4768PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
4.5V
0.1
4.5V
0.01
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
1000
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 56A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 175°C
T J = 25°C
1
VDS = 50V
60µs
PULSE WIDTH
0.1
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 56A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 200V
VDS = 125V
VDS = 50V
C, Capacitance (pF)
10000
C iss
C oss
Crss
1000
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
30
60
90
120 150 180 210 240
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-12-12
1000
1000
IRFP4768PbF
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
100
1msec
10msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
1
10
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
100
T J = 175°C
T J = 25°C
10
1
VGS = 0V
0.1
ID, Drain-to-Source Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
Fig 8.
Maximum Safe Operating Area
320
Id = 5mA
80
ID, Drain Current (A)
300
60
280
40
260
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
240
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
20.0
18.0
16.0
14.0
Energy (µJ)
Fig 10.
Drain-to–Source Breakdown Voltage
3200
EAS , Single Pulse Avalanche Energy (mJ)
2800
2400
2000
1600
1200
800
400
0
25
50
75
100
ID
TOP
12A
17A
BOTTOM 56A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-50
0
50
100
150
200
250
300
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
oss
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2016-12-12
1
Thermal Response ( Z thJC ) °C/W
IRFP4768PbF
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
C
0.01
Ri (°C/W)
0.0634
0.1109
0.1148
I (sec)
0.000278
0.005836
0.053606
0.001
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulse
800
700
EAR , Avalanche Energy (mJ)
600
500
400
300
200
100
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 56A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far
in excess of Tj
max
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
T
7.
=Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av
= Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
175
75
100
125
150
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2016-12-12
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