IRGP4263DPbF
IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 650V
I
C
= 60A, T
C
=100°C
t
SC
5.5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V @ I
C
= 48A
G
E
C
G
C
E
G
C
E
n-channel
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
Gate
IRGP4263DPbF
TO‐247AC
C
Collector
IRGP4263D‐EPbF
TO‐247AD
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive V
CE (ON)
temperature coefficient
5.5µs short circuit SOA
Lead-free, RoHS compliant
Base part number
IRGP4263DPbF
IRGP4263D-EPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4263DPbF
IRGP4263D-EPbF
Max.
650
90
60
192
192
74
45
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.46
0.97
–––
–––
Units
V
A
V
W
C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
© 2014 International Rectifier
Units
°C/W
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August 21, 2014
IRGP4263DPbF/IRGP4263D-EPbF
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min.
650
—
Typ.
—
0.69
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 3mA (25°C-175°C)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
V
CE(on)
—
1.7
—
2.1
Gate Threshold Voltage
5.5
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-23
V
GE(th)
/T
J
gfe
Forward Transconductance
—
31
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
890
Gate-to-Emitter Leakage Current
—
—
I
GES
—
1.9
Diode Forward Voltage Drop
V
F
—
1.4
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.1
V
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
7.7
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.4mA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 48A, PW = 20µs
35
µA V
GE
= 0V, V
CE
= 650V
—
V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
±100
nA V
GE
= ±20V
2.85
V
I
F
= 48A
—
I
F
= 48A, T
J
= 175°C
Max Units
Conditions
145
I
C
= 48A
45
nC V
GE
= 15V
V
CC
= 400V
60
2.6
1.9
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
4.5
R
G
= 10, L = 210µH, T
J
= 25°C
90
Energy losses include tail & diode
80
ns reverse recovery
160
50
—
—
—
—
—
—
—
—
—
—
mJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
= 10, L = 210µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
96
30
40
1.7
1.0
2.7
70
60
140
30
2.9
1.4
4.3
55
60
145
65
2935
235
84
ns
FULL SQUARE
5.5
—
—
—
—
370
170
25
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 144A
V
CC
= 480V, Vp
≤
650V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
650V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 48A
V
GE
= 15V, Rg = 10
2
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© 2014 International Rectifier
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August 21, 2014
100
90
80
Load Current ( A )
IRGP4263DPbF/IRGP4263D-EPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 163W
Square Wave:
V
CC
70
60
50
40
30
Diode as specified
I
20
10
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
350
300
80
250
Ptot (W)
60
IC (A)
200
150
100
40
20
50
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
1000
100
10µsec
IC (A)
100
IC (A)
10
100µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
VCE (V)
1msec
DC
0.1
1000
10000
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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August 21, 2014
200
VGE = 18V
VGE = 15V
150
VGE = 12V
VGE = 10V
ICE (A)
IRGP4263DPbF/IRGP4263D-EPbF
200
VGE = 18V
VGE = 15V
150
VGE = 12V
VGE = 10V
ICE (A)
VGE = 8.0V
100
VGE = 8.0V
100
50
50
0
0
2
4
6
V CE (V)
8
10
0
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
200
VGE = 18V
VGE = 15V
150
VGE = 12V
VGE = 10V
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
200
150
100
IF (A)
VGE = 8.0V
100
-40°C
25°C
175°C
50
50
0
0
2
4
6
V CE (V)
8
10
0
0
1
2
V F (V)
3
4
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
12
10
8
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
12
10
ICE = 24A
ICE = 48A
8
V CE (V)
ICE = 24A
ICE = 48A
ICE = 96A
ICE = 96A
6
4
2
0
5
10
V GE (V)
15
20
6
4
2
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
August 21, 2014
12
10
8
V CE (V)
IRGP4263DPbF/IRGP4263D-EPbF
200
TJ = 25°C
TJ = 175°C
ICE = 24A
ICE = 48A
150
6
4
ICE (A)
20
ICE = 96A
100
50
2
0
5
10
V GE (V)
15
0
4
6
8
10
12
14
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
10
9
8
EON
Swiching Time (ns)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
7
Energy (mJ)
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110
EOFF
tdOFF
100
tF
tdON
tR
10
0
10 20 30 40 50 60 70 80 90 100
IC (A)
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 210µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
8
7
6
Energy (mJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 210µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
10000
Swiching Time (ns)
EON
1000
tdOFF
100
tF
tdON
5
4
3
2
1
0
0
20
40
60
80
100
120
EOFF
tR
10
1
0
20
40
60
80
100
RG ()
RG ()
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210µH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210µH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Submit Datasheet Feedback
August 21, 2014
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