PD - 97119
IRF8721PbF
Applications
l
Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l
Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l
Very Low Gate Charge
l
Low R
DS(on)
at 4.5V V
GS
l
Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
Lead-Free
Description
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
Qg
30V 8.5m
:
@V
GS
= 10V 8.3nC
A
A
D
D
D
D
S
S
S
G
1
2
3
4
8
7
6
5
Top View
SO-8
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
14
11
110
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
07/30/07
1
IRF8721PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
6.9
10.6
–––
-6.2
–––
–––
–––
–––
–––
8.3
2.0
1.0
3.2
2.0
4.2
5.0
1.8
8.2
11
8.1
7.0
1040
229
114
–––
–––
8.5
12.5
2.35
–––
1.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 11A
S
nA
V
mV/°C
μA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 11A
e
V
DS
= V
GS
, I
D
= 25μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 11A
See Fig. 16a and 16b
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 11A
R
G
= 1.8Ω
See Fig. 15a
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
68
11
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
14
15
3.1
A
112
1.0
21
23
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
DD
= 15V
di/dt = 300A/μs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF8721PbF
1000
TOP
1000
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
0.1
2.3V
0.01
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
10
100
0.1
2.3V
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
ID, Drain-to-Source Current (A)
100
≤
60μs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 15V
ID = 14A
VGS = 10V
10
1.5
1
TJ = 150°C
TJ = 25°C
1.0
0.1
0.01
1.0
2.0
3.0
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF8721PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
ID= 11A
VDS = 24V
VDS= 15V
12
C, Capacitance (pF)
1000
Ciss
Coss
Crss
8
4
100
1
10
100
0
0
5
10
15
20
25
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
100
100μsec
10
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
TJ = 150°C
10
1
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
0.1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF8721PbF
16
2.4
ID , Drain Current (A)
12
VGS(th) Gate threshold Voltage (V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID = 25μA
8
4
0
25
50
75
100
125
150
-75
-50
-25
0
25
50
75
100
125
150
TA, Ambient Temperature (°C)
TJ, Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
a
τ
1
τ
2
τ
3
τ
4
τ
4
1
0.1
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τι
(sec)
1.935595 0.000148
7.021545 0.019345
26.61013 0.81305
14.43961
26.2
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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