IRFH4201PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
25
0.95
1.25
46.0
100
nC
A
PQFN 5X6 mm
V
m
Applications
Synchronous Rectifier MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low R
DSon
(<0.95 m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH4201PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4201TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Bottom)
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
49
Units
V
A
326
206
100
400
3.5
156
0.028
-55 to + 150
W/°C
°C
W
Notes
through
are on page 9
1
2017-01-24
IRFH4201PbF
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
175
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
20
0.70
0.97
1.6
-5.9
–––
–––
–––
–––
94.0
46.0
11.0
6.4
16.0
12.6
22.4
46.0
0.9
20
43
24
19
6100
1700
450
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
31
84
Parameter
Typ.
–––
–––
–––
–––
Max.
100
A
400
1.0
47
126
V
ns
nC
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
di/dt = 400A/µs
D
G
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Total Gate Charge
Q
g
Q
g
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Q
gs1
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
Output Capacitance
C
oss
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
Avalanche Current
I
AR
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
V
GS(th)
V
GS(th)
I
DSS
I
GSS
Max.
–––
–––
0.95
1.25
2.1
–––
1.0
100
-100
–––
–––
69.0
–––
–––
–––
–––
–––
–––
2.7
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 150µA
mV/°C
µA V
DS
= 20V, V
GS
= 0V
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 13V, I
D
= 50A
nC V
GS
= 10V, V
DS
= 13V, I
D
= 50A
nC
nC
ns
pF
V
DS
= 13V
V
GS
= 4.5V
I
D
= 50A
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
478
50
Max.
0.8
18
36
22
Units
°C/W
2
2017-01-24
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
IRFH4201PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
10
10
2.5V
1
2.5V
60µs PULSE WIDTH
0.1
0.01
0.1
1
Tj = 25°C
10
1
100
1000
0.01
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 15V
60µs PULSE WIDTH
0.1
1.0
1.5
2.0
2.5
3.0
3.5
V GS, Gate-to-Source Voltage (V)
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 20V
V DS= 13V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2017-01-24
1000
10000
ID, Drain-to-Source Current (A)
IRFH4201PbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
1000
100
Limited by package
100µsec
10
1msec
1
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V SD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
DC
0.1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
350
V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.6
300
ID, Drain Current (A)
Limited by package
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
250
200
150
100
50
0
25
50
75
100
125
150
TC , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to–Source Breakdown Voltage
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2017-01-24
RDS(on), Drain-to -Source On Resistance (m
)
IRFH4201PbF
5.0
EAS , Single Pulse Avalanche Energy (mJ)
2000
ID = 50A
4.0
1600
ID
TOP
15A
24A
BOTTOM 50A
3.0
1200
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2
4
6
8
10
12
14
16
18
20
800
400
0
25
50
75
100
125
150
V GS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
2017-01-24
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