IRFHM8337TRPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C
= 25°C)
30
12.4
17.9
5.4
18
nC
A
PQFN 3.3 x 3.3 mm
V
m
Applications
System/load switch,
Charge or discharge switch for battery protection
Features
Low Thermal Resistance to PCB (< 5.0°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
Benefits
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8337PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8337TRPbF
Absolute Maximum Ratings
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
12
9.4
94
35
22
18
2.8
25
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes
through
are on page 8
1
2016-2-23
IRFHM8337TRPbF
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
9.4
14.5
1.8
-6.2
–––
–––
–––
–––
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
2.0
9.0
11
9.9
5.6
755
171
83
Max.
–––
–––
12.4
17.9
2.35
–––
1.0
150
100
-100
–––
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
m
V
GS
= 4.5V, I
D
=9.4A
V
V = V
GS
, I
D
= 25µA
mV/°C
DS
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V,T
J
= 125°C
µA V
GS
= 20V
V
GS
=-20 V
S
V
DS
= 15V, I
D
= 9.4A
nC
nC
ns
pF
V
DS
= 15V
V
GS
= 4.5V
I
D
= 9.4A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 9.4A
R
G
= 1.3
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
Typ.
–––
Max.
13
Units
mJ
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
20
27
Max.
18
94
1.0
30
41
Units
A
V
ns
nC
Typ.
–––
–––
–––
–––
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.4A, V
DD
= 15V
di/dt = 200A/µs
D
G
S
Max.
5.0
50
45
31
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
IRFHM8337TRPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
Tj
60µs PULSE WIDTH
= 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
1
0.1
1
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
1.8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
ID = 12A
VGS = 10V
10
T J = 25°C
1
T J = 150°C
VDS = 15V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 9.4A
VDS = 24V
VDS = 15V
1000
Ciss
Coss
100
Crss
10
1
10
VDS , Drain-to-Source Voltage (V)
100
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
0
2
4
6
8
10
12
14
16
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
1000
IRFHM8337TRPbF
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
10
TJ = 150°C
TJ = 25°C
1msec
1
T A = 25°C
10msec
1
VGS = 0V
Tj = 150°C
Single Pulse
0.1
0
1
10
100
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
12
10
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
2.0
ID = 25µA
1.5
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
RDS(on), Drain-to -Source On Resistance (m
)
IRFHM8337TRPbF
35
60
EAS , Single Pulse Avalanche Energy (mJ)
ID = 12A
30
25
20
50
40
30
20
10
0
25
50
75
ID
TOP
2.95A
3.63A
BOTTOM 9.40A
T J = 125°C
15
10
5
2
4
6
8
10
T J = 25°C
12
14
16
18
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
100
Fig 13.
Maximum Avalanche Energy vs. Drain Current
Avalanche Current (A)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.01
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
1.0E-01
Fig 14. Single avalanche event: pulse current vs. pulse width
5
2016-2-23
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
