IRFH5250DPbF
V
DS
R
DS(on) max
(@V
GS
= 10V)
25
1.4
0.6
27
100
V
mΩ
V
ns
A
HEXFET
®
Power MOSFET
V
SD
max
(@I
S
= 5.0A)
t
rr (typical)
I
D
(@T
mb
= 25°C)
h
PQFN 5X6 mm
Applications
•
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Benefits
Low RDSon (<1.4mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5250DTRPBF
IRFH5250DTR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
mb
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
25
± 20
40
32
100
Units
V
g
Power Dissipation
g
Power Dissipation
c
h
100
h
400
3.6
156
0.029
-55 to + 150
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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June 23, 2015
IRFH5250DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-8.0
1.0
1.7
1.80
-11
–––
–––
–––
–––
–––
83
39
11
6.1
12
9.9
18.1
36
1.4
23
72
23
24
6115
1730
610
Max. Units
–––
–––
1.4
2.2
2.35
–––
500
5.0
100
-100
–––
–––
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Conditions
V
V
GS
= 0V, I
D
= 1.0mA
mV/°C Reference to 25°C, I
D
= 10mA
V
GS
= 10V, I
D
= 50A
mΩ
V
GS
= 4.5V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150μA
V
e
e
mV/°C
μA
mA
nA
S
nC
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 50A
V
GS
= 10V, V
DS
= 13V, I
D
= 50A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 50A
nC
nC
Ω
ns
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8Ω
V
GS
= 0V
pF
V
DS
= 13V
ƒ = 1.0MHz
Max.
470
50
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
–––
Max. Units
100
A
400
0.6
1.0
V
V
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
e
e
–––
27
41
ns T
J
= 25°C, I
F
= 50A, V
DD
= 13V
–––
51
77
nC di/dt = 335A/μs
Time is dominated by parasitic Inductance
eÃ
Thermal Resistance
Parameter
R
θJC-mb
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Mounting Base
Junction-to-Case
Junction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
22
Units
°C/W
g
Junction-to-Ambient
g
f
2
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June 23, 2015
IRFH5250DPbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
1.4
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.2
10
T J = 150°C
T J = 25°C
1.0
0.8
1.0
1
2
VDS = 15V
≤60μs
PULSE WIDTH
3
4
5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
June 23, 2015
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IRFH5250DPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
T J = 150°C
100
100μsec
10msec
DC
1msec
10
T J = 25°C
10
1
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
300
250
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
Limited By Package
2.5
200
150
100
50
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 150μA
1.5
ID = 250μA
ID = 1.0mA
1.0
ID = 1.0A
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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June 23, 2015
IRFH5250DPbF
RDS(on) , Drain-to -Source On Resistance (m
Ω)
4
ID = 50A
3
2000
EAS , Single Pulse Avalanche Energy (mJ)
1800
1600
1400
1200
1000
800
600
400
200
0
25
50
75
ID
TOP
18A
24A
BOTTOM 50A
2
T J = 125°C
1
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
1000
Fig 13.
Maximum Avalanche Energy vs. Drain Current
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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2015 International Rectifier
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June 23, 2015
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