IRF6716MPbF
IRF6716MTRPbF
l
RoHs Compliant and Halogen Free
l
Low Profile (<0.6 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
PD - 97274C
Typical values (unless otherwise specified)
DirectFET Power MOSFET
R
DS(on)
1.2mΩ@10V
V
DSS
Q
g
tot
V
GS
Q
gd
12nC
R
DS(on)
2.0mΩ@ 4.5V
25V max ±20V max
39nC
Q
gs2
5.3nC
Q
rr
28nC
Q
oss
27nC
V
gs(th)
1.9V
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
25
±20
39
31
180
320
330
32
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
ID= 32A V = 20V
DS
VDS= 13V
A
mJ
A
5
4
3
2
1
0
2
3
4
5
6
7
8
T J = 25°C
T J = 125°C
ID = 40A
9
10
60
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance vs. Gate Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.65mH, R
G
= 25Ω, I
AS
= 32A.
www.irf.com
1
04/30/09
IRF6716MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.4
–––
–––
–––
–––
–––
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
17
1.2
2.0
1.9
-6.1
–––
–––
–––
–––
–––
39
10
5.3
12
11.7
17.3
27
1.0
26
105
25
41
5150
1340
610
–––
–––
1.6
2.6
2.4
–––
1.0
150
100
-100
–––
59
–––
–––
–––
–––
–––
–––
1.6
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 40A
V
GS
= 4.5V, I
D
= 32A
V
V
V
DS
= V
GS
, I
D
= 100µA
mV/°C
µA V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
J
= 125°C
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 32A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 32A
See Fig. 2
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
ns
I
D
= 32A
R
G
= 1.8Ω
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
nC
Ã
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
28
28
4.5
A
320
1.0
42
42
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A
di/dt = 200A/µs
d
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6716MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
Parameter
Max.
3.6
2.3
78
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
A
τ
1
τ
2
τ
3
τ
3
τ
A
g
dg
eg
fg
Parameter
Typ.
–––
12.5
20
–––
1.0
0.031
Max.
35
–––
–––
1.6
–––
Units
°C/W
Ã
W/°C
Thermal Response ( Z thJA )
10
1
0.1
Ri (°C/W)
τi
(sec)
2.003
0.000686
17.536 0.78614
15.465
28
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu (still
air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
www.irf.com
3
IRF6716MPbF
1000
≤
60µs PULSE WIDTH
Tj = 25°C
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
2.5V
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
2.5V
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
T J = 25°C
T J = -40°C
Fig 5.
Typical Output Characteristics
2.0
ID = 40A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
1.5
V GS = 10V
V GS = 4.5V
10
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
6
T J = 25°C
5
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
Coss
1000
Crss
4
3
2
1
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
50
100
150
200
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
www.irf.com
IRF6716MPbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100
T J = 150°C
T J = 25°C
T J = -40°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
10msec
DC
1msec
1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
1
T A = 25°C
T J = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
200
175
150
ID, Drain Current (A)
3.0
Fig 11.
Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
2.5
125
100
75
50
25
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 100µA
1.5
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 250µA
Fig 12.
Maximum Drain Current vs. Case Temperature
1400
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
16A
19A
BOTTOM 32A
1200
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
工作这点儿事
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
