PD - 96188
IRFS3006PbF
IRFSL3006PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
D
60V
2.0m
:
2.5m
:
270A
195A
c
S
D
S
G
G
D
S
D
2
Pak
IRFS3006PbF
TO-262
IRFSL3006PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
d
f
270
191
195
1080
375
2.5
± 20
10
-55 to + 175
300
10lb in (1.1N m)
320
See Fig. 14, 15, 22a, 22b,
Units
A
W
W/°C
V
V/ns
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãd
e
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
g
mJ
A
mJ
kl
jk
Parameter
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
www.irf.com
1
10/06/08
IRFS/SL3006PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
60
–––
–––
2.0
–––
–––
–––
–––
–––
–––
0.07
2.0
–––
–––
–––
–––
–––
2.0
–––
–––
2.5
4.0
20
250
100
-100
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 170A
V V
DS
= V
GS
, I
D
= 250µA
µA V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
Ω
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
200
37
60
140
16
182
118
189
8970
1020
534
1480
1920
–––
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 25V, I
D
= 170A
I
D
= 170A
V
DS
=30V
V
GS
= 10V
I
D
= 170A, V
DS
=0V, V
GS
= 10V
V
DD
= 39V
I
D
= 170A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 48V
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
g
ns
pF
g
h
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 270
–––
Conditions
MOSFET symbol
showing the
integral reverse
G
D
A
A
Ãd
1080
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
44
–––
ns
–––
48
–––
–––
63
–––
nC
T
J
= 125°C
–––
77
–––
–––
2.4
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 170A, V
GS
= 0V
T
J
= 25°C
V
R
= 51V,
T
J
= 125°C
I
F
= 170A
di/dt = 100A/µs
T
J
= 25°C
g
S
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.022mH
R
G
= 25Ω, I
AS
= 170A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
170A, di/dt
≤
1360A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
R
θJC
value shown is at time zero
2
www.irf.com
IRFS/SL3006PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
100
10
3.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
3.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 170A
VGS = 10V
2.0
100
TJ = 175°C
1.5
TJ = 25°C
10
1.0
VDS = 25V
≤
60µs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
7.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
16000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID= 170A
12
VDS= 48V
VDS= 30V
12000
C, Capacitance (pF)
Ciss
8000
8
4000
4
Coss
Crss
0
0
40
80
120
160
200
240
280
0
1
10
VDS, Drain-to-Source Voltage (V)
100
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFS/SL3006PbF
1000
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
ISD , Reverse Drain Current (A)
100
1000
100
LIMITED BY PACKAGE
10
TJ = 25°C
1
10
1msec
10msec
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig 8.
Maximum Safe Operating Area
80
300
Limited By Package
250
ID, Drain Current (A)
ID = 5mA
75
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
70
65
60
55
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
1400
1200
1000
800
600
400
200
0
1.5
I D
TOP
20A
27A
BOTTOM
170A
Energy (µJ)
1.0
0.5
0.0
0
10
20
30
40
50
60
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
4
www.irf.com
IRFS/SL3006PbF
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
Ri (°C/W)
0.22547
τι
(sec)
0.006073
τ
1
τ
2
0.175365 0.000343
0.001
Ci=
τi/Ri
C
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
0.01
0.05
10
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs.Pulsewidth
400
EAR , Avalanche Energy (mJ)
300
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 170A
200
100
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
175
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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