FastIRFET™
IRFH4226PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
25
2.4
3.3
16
70
nC
A
PQFN 5X6 mm
V
m
Applications
Control MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Features
Low Charge (typical 16 nC)
Low R
DSon
(<2.4 m)
Low Thermal Resistance to PCB (<2.7 °C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH4226PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4226TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
30
Units
V
110
69
70
460
3.4
46
0.027
-55 to + 150
W
W/°C
°C
A
Notes
through
are on page 9
1
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IRFH4226PbF
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
136
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
1.7
2.6
1.6
-5.7
–––
–––
–––
–––
32
16
3.6
2.0
5.8
4.6
7.8
15
1.1
11
35
14
8.1
2000
570
150
Max.
131
30
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
16
28
Parameter
Typ.
–––
–––
–––
–––
Max.
70
A
460
1.0
24
42
V
ns
nC
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 13V
di/dt = 450A/µs
D
G
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
V
GS(th)
V
GS(th)
I
DSS
I
GSS
Max.
–––
–––
2.4
3.3
2.1
–––
1.0
100
-100
–––
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
m
V
GS
= 4.5V, I
D
= 30A
V
V
DS
= V
GS
, I
D
= 50µA
mV/°C
µA V
DS
= 20V, V
GS
= 0V
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 10V, I
D
= 30A
nC V
GS
= 10V, V
DS
= 13V, I
D
= 30A
nC
nC
ns
pF
V
DS
= 13V
V
GS
= 4.5V
I
D
= 30A
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 30A
R
G
=1.8
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Units.
mJ
A
Max.
2.7
27
37
23
Units
°C/W
2
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1000
TOP
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
IRFH4226PbF
1000
TOP
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.25V
3.0V
2.75V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
2.75V
10
10
2.75V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 30A
VGS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
1
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = Cgd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 30A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
VDS= 5.0V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
March 11, 2015
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1000
IRFH4226PbF
1000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
TJ = 150°C
ID, Drain-to-Source Current (A)
100
Package Limit
100µsec
1msec
10
TJ = 25°C
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
DC
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-to-Drain Voltage (V)
0.1
0.01
10
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
125
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.8
100
ID, Drain Current (A)
Limited by package
2.4
75
2.0
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 10mA
50
1.6
25
1.2
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC ) °C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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)
RDS(on), Drain-to -Source On Resistance (m
IRFH4226PbF
8.0
ID = 30A
6.0
EAS , Single Pulse Avalanche Energy (mJ)
600
500
400
300
200
100
0
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
ID
TOP
9.5A
18A
BOTTOM 30A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Single Avalanche Current vs. pulse Width
5
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March 11, 2015
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