DIGITAL AUDIO MOSFET
PD - 96239
IRF7665S2TRPbF
IRF7665S2TR1PbF
Key Parameters
100
51
8.3
3.5
m
:
nC
V
Features
•
Key parameters optimized for Class-D audio amplifier
applications
•
Low R
DS(on)
for improved efficiency
•
Low Q
g
for better THD and improved efficiency
•
Low Q
rr
for better THD and lower EMI
•
Low package stray inductance for reduced ringing and lower
EMI
•
Can deliver up to 100W per channel into 8Ω with no heatsink
•
Dual sided cooling compatible
·
Compatible with existing surface mount technologies
·
RoHS compliant containing no lead or bromide
·
Lead-Free (Qualified up to 260°C Reflow)
·
Industrial Qualified
V
DS
R
DS(on)
typ. @ V
GS
= 10V
Q
g
typ.
R
G(int)
typ.
SB
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SB
SC
M2
M4
L4
L6
L8
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFET
TM
packaging technology. DirectFET
TM
packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
TM
package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFET
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
P
D
@T
A
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
j
Power Dissipation
j
Maximum Power Dissipation
Max.
100
± 20
14.4
10.2
4.1
58
30
15
Units
V
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
jÃ
2.4
0.2
-55 to + 175
Storage Temperature Range
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJ-Can
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
jk
e
h
i
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
Units
°C/W
Notes
through
are on page 2
www.irf.com
1
07/02/09
IRF7665S2TR/TR1PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
100
–––
–––
3.0
–––
–––
–––
–––
–––
Typ.
–––
0.10
51
4.0
–––
–––
–––
–––
3.5
Max.
–––
–––
62
5.0
20
250
100
-100
5.0
Units
V
V/°C
mΩ
V
µA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.9A
V
DS
= V
GS
, I
D
= 25µA
f
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Min.
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
8.3
1.9
0.77
3.2
2.4
4.0
3.8
6.4
7.1
3.6
515
112
30
533
67
115
Max.
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Units
S
V
DS
= 50V
V
GS
= 10V
I
D
= 8.9A
nC
Conditions
V
DS
= 25V, I
D
= 8.9A
See Fig. 6 and 17
V
DD
= 50V
I
D
= 8.9A
ns
R
G
= 6.8Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
pF
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
g
Avalanche Characteristics
Ã
d
Min.
–––
–––
–––
–––
–––
Max.
37
8.9
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Typ.
–––
–––
–––
33
38
Max.
14.4
58
1.3
–––
–––
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
Ã
V
ns
nC
T
J
= 25°C, I
S
= 8.9A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.9A, V
DD
= 25V
di/dt = 100A/µs
f
S
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.944mH, R
G
= 25Ω, I
AS
= 8.9A.
Surface mounted on 1 in. square Cu board.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Based on testing done using a typical device & evaluation board
at Vbus=±45V, f
SW
=400KHz, and T
A
=25°C. The delta case
temperature
∆
T
C
is 55°C.
2
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IRF7665S2TR/TR1PbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
10
BOTTOM
1
BOTTOM
0.1
1
5.0V
0.01
5.0V
≤
60µs
PULSE WIDTH
0.001
0.1
1
Tj = 25°C
0.1
10
100
0.1
1
≤
60µs
PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 8.9A
VGS = 10V
2.0
ID, Drain-to-Source Current (A)
10
1
T J = -40°C
TJ = 25°C
TJ = 175°C
1.5
0.1
VDS = 25V
≤
60µs PULSE WIDTH
0.01
2
4
6
8
10
12
14
16
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 8.9A
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
QG, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF7665S2TR/TR1PbF
100
T J = -40°C
TJ = 25°C
TJ = 175°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
100
10
100µsec
1msec
1
1
10msec
0.1
VGS = 0V
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
DC
0.01
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
16
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
14
12
10
8
6
4
2
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
6.5
ID, Drain Current (A)
5.5
4.5
3.5
ID = 25µA
2.5
ID = 250µA
ID = 1.0mA
D = 1.0A
1.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.49687
τ
τi
(sec)
0.000119
8.231486
0.018926
0.002741
τ
J
0.00517
2.55852
1.94004
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7665S2TR/TR1PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
Vgs = 10V
280
240
200
160
120
80
40
0
10
20
30
40
ID, Drain Current (A)
T J = 25°C
T J = 125°C
RDS(on), Drain-to -Source On Resistance (m
Ω)
320
140
ID = 8.9A
120
100
T J = 125°C
80
60
T J = 25°C
40
6
7
8
9
10
11
12
13
14
15
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
160
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
On-Resistance vs. Drain Current
ID
TOP
1.64A
3.04A
BOTTOM 8.90A
140
120
100
80
60
40
20
0
25
50
75
15V
VDS
L
DRIVER
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
Ω
Fig 15a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
I
AS
Fig 15b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
R
D
D.U.T.
+
90%
-
V
DD
V
DS
10%
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 16a.
Switching Time Test Circuit
Fig 16b.
Switching Time Waveforms
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