IRFH7921PbF
Applications
l
HEXFET
®
Power MOSFET
l
High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
Optimized for Control FET Applications
V
DSS
30V
R
DS(on)
max
Qg
8.5m
Ω
@V
GS
= 10V 9.3nC
Benefits
l
l
l
l
l
l
l
l
Very low R
DS(ON)
at 4.5V V
GS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
15
12
34
120
3.1
Units
V
g
Power Dissipation
g
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
2.0
0.025
-55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
f
Typ.
–––
–––
Max.
7.9
40
Units
°C/W
Junction-to-Ambient
g
Notes
through
are on page 9
1
www.irf.com
© 2013 International Rectifier
August 16, 2013
IRFH7921PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
7.1
10.4
1.8
-6.2
–––
–––
–––
–––
–––
9.3
2.2
1.2
3.2
2.7
4.4
5.0
1.4
12
7.6
14
4.7
1210
240
120
–––
–––
8.5
12.5
2.35
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
2.4
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
mV/°C
µA
nA
S
e
= 12A
e
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 12A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
29
12
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
12
11
3.9
A
120
1.0
18
17
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 300A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
© 2013 International Rectifier
August 16, 2013
IRFH7921PbF
1000
1000
≤
60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
1
0.1
2.3V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
2.3V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
1.6
ID = 15A
1.4
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
TJ = 150°C
T J = 25°C
VDS = 15V
≤
60µs PULSE WIDTH
(Normalized)
1.2
1.0
1
0.8
0.1
1
2
3
4
5
6
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
3
www.irf.com
© 2013 International Rectifier
Fig 4.
Normalized On-Resistance
vs. Temperature
August 16, 2013
IRFH7921PbF
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
5.0
ID= 12A
4.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
3.0
2.0
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
1.0
0.0
0
2
4
6
8
10
12
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
10msec
10
T J = 150°C
T J = 25°C
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
www.irf.com
© 2013 International Rectifier
August 16, 2013
IRFH7921PbF
16
VGS(th) , Gate Threshold Voltage (V)
2.5
14
12
ID, Drain Current (A)
2.0
10
8
6
4
2
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
1.5
ID = 25µA
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
4
τ
A
Ri (°C/W)
2.4768
6.6412
15.997
14.892
τi
(sec)
0.000496
0.014506
0.80399
34.4
0.1
SINGLE PULSE
( THERMAL RESPONSE )
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci=
τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com
© 2013 International Rectifier
August 16, 2013
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
