IRGP4650DPbF
IRGP4650D-EPbF
V
CES
= 600V
I
C
= 50A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.60V @ I
C
= 35A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
C
n-channel
G
Gate
E
GC
TO-247AC
IRGP4650DPbF
E
GC
TO-247AD
IRGP4650D-EP
C
Collector
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Base part number
IRGP4650DPbF
IRGP4650D-EPbF
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4650DPbF
IRGP4650D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
c
f
Continuous Gate-to-Emitter Voltage
600
76
50
105
140
76
50
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
Typ.
Max.
V
A
V
W
°C
Thermal Resistance
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
d
d
Parameter
Units
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
–––
–––
–––
–––
–––
–––
0.24
–––
0.56
1.0
–––
40
°C/W
1
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© 2014 International Rectifier
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November 17, 2014
IRGP4650DPbF/IRGP4650D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Min.
—
1.3
1.60
1.90
2.00
—
-18
25
1.0
770
2.0
1.4
—
Typ.
—
—
1.90
—
—
6.5
—
—
70
—
3.0
—
±100
Max.
V
V
GE
= 0V, I
C
= 100μA
mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
I
C
= 35A, V
GE
= 15V, T
J
= 175°C
V
V
CE
= V
GE
, I
C
= 1.0mA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
S
V
CE
= 50V, I
C
= 35A, PW = 60μs
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
I
F
= 35A
I
F
= 35A, T
J
= 175°C
nA
V
GE
= ±20V
Units
Conditions
e
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
69
18
29
390
632
1022
46
33
105
44
1013
929
1942
43
35
127
61
2113
197
65
104
27
44
508
753
1261
56
42
117
54
—
—
—
—
—
—
—
—
—
—
I
C
= 35A
V
GE
= 15V
V
CC
= 400V
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
nC
μJ
g
ns
μJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
V
CC
= 480V, Vp
600V
Rg = 10Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 35A
V
GE
= 15V, Rg = 10Ω, L =210μH, L
s
= 150nH
g
ns
pF
FULL SQUARE
5
—
—
—
—
304
120
25
—
—
—
—
μs
μJ
ns
A
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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November 17, 2014
IRGP4650DPbF/IRGP4650D-EPbF
80
70
60
50
40
30
20
10
0
25
50
75
100
T C (°C)
125
150
175
300
250
200
Ptot (W)
IC (A)
150
100
50
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100μsec
10μsec
100
IC (A)
10
1msec
DC
IC (A)
10
1
1000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
ICE (A)
80
60
40
20
0
0
2
4
VGE = 10V
VGE = 8.0V
6
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
3
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© 2014 International Rectifier
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
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November 17, 2014
VCE (V)
IRGP4650DPbF/IRGP4650D-EPbF
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
120
100
IF (A)
ICE (A)
80
60
40
20
0
0
80
60
40
20
0
-40°C
25°C
175°C
2
4
6
8
10
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 18A
12
10
8
6
4
2
0
ICE = 35A
ICE = 70A
ICE = 18A
ICE = 35A
ICE = 70A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
140
120
100
80
60
40
20
0
T J = 175°C
TJ = 25°C
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
ICE = 18A
ICE = 35A
ICE = 70A
4
5
6
7
8
9
10 11 12 13 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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© 2014 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
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November 17, 2014
IRGP4650DPbF/IRGP4650D-EPbF
4000
3500
3000
Swiching Time (ns)
1000
Energy (μJ)
2500
2000
1500
1000
500
0
0
10
20
30
EON
tdOFF
100
tF
EOFF
tdON
tR
10
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
3000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
2500
Swiching Time (ns)
EON
Energy (μJ)
2000
EOFF
1500
tdOFF
100
tF
tdON
1000
tR
10
500
0
25
50
Rg (Ω)
75
100
0
10
20
30
40
50
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
35
RG = 10Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
26
24
22
IRR (A)
30
IRR (A)
25
RG = 22Ω
20
18
20
RG = 47Ω
15
RG = 100Ω
10
10
20
30
40
IF (A)
50
60
70
16
14
0
20
40
60
80
100
RG (
Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2014 International Rectifier
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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November 17, 2014
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