PD - 96197
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
IRGS4056DPbF
V
CES
= 600V
I
C
= 12A, T
C
= 100°C
G
E
t
SC
≥
5µs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.55V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
Gate
G
C
E
D
2
Pak
C
Collector
Max.
600
24
12
48
48
24
12
48
±20
±30
140
70
-55 to +175
E
Emitter
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
c
e
A
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Continuous Gate-to-Emitter Voltage
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
80
Max.
1.07
3.66
–––
–––
Units
°C/W
1
www.irf.com
11/07/08
IRGS4056DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.55
1.90
1.97
—
-18
7.7
2.0
475
2.10
1.61
—
Max. Units
—
—
1.85
—
—
6.5
—
—
25
—
3.10
—
±100
nA
V
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
f
Ref.Fig
CT6
CT6
5,6,7
9,10,11
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 12A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 12A, V
GE
= 15V, T
J
= 150°C
I
C
= 12A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 350µA
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
9, 10,
11, 12
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
S V
CE
= 50V, I
C
= 12A, PW = 80µs
µA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 12A
I
F
= 12A, T
J
= 175°C
V
GE
= ±20V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
25
7.0
11
75
225
300
31
17
83
24
185
355
540
30
18
102
41
765
52
23
Max. Units
38
11
16
118
273
391
40
24
94
31
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 12A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
24
CT1
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT4
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
CT4
I
C
= 12A, V
CC
= 400V, V
GE
=15V
R
G
=22Ω, L=100µH, L
S
=150nH, T
J
= 175°C
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH
T
J
= 175°C
fÃ
13, 15
CT4
WF1, WF2
14, 16
CT4
WF1
WF2
23
Energy losses include tail & diode reverse recovery
f = 1.0Mhz
T
J
= 175°C, I
C
= 48A
V
CC
= 480V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
4
CT2
FULL SQUARE
5
—
—
—
—
280
68
19
—
—
—
—
µs
µJ
ns
A
V
CC
= 400V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 12A
V
GE
= 15V, Rg = 22Ω, L =200µH, L
s
= 150nH
22, CT3
WF4
17, 18, 19
20, 21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 22Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
2
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IRGS4056DPbF
25
150
125
100
20
Ptot (W)
0
20
40
60
80 100 120 140 160 180
T C (°C)
15
IC (A)
75
50
10
5
25
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
0
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
Fig. 2
- Power Dissipation vs. Case
Temperature
100
10
10µsec
IC (A)
IC (A)
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
10
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
45
40
35
30
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
45
40
35
30
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=15V
ICE (A)
20
15
10
5
0
0
1
2
3
4
VCE (V)
5
ICE (A)
25
25
20
15
10
5
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
7
8
0
1
2
3
4
VCE (V)
5
6
7
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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3
IRGS4056DPbF
45
40
35
30
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
70
60
50
IF (A)
ICE (A)
25
20
15
10
5
0
0
1
2
3
4
VCE (V)
5
6
7
8
40
30
20
10
0
0.0
-40°c
25°C
175°C
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
20
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 6.0A
ICE = 12A
ICE = 24A
12
10
8
6
4
2
0
ICE = 6.0A
ICE = 12A
ICE = 24A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
40
50
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
T J = 175°C
T J = 25°C
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
ICE = 12A
ICE = 24A
ICE (A)
12
ICE = 6.0A
30
20
10
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
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IRGS4056DPbF
800
700
600
Swiching Time (ns)
tdOFF
100
tF
tdON
10
tR
1000
Energy (µJ)
500
400
300
200
100
0
0
EOFF
EON
1
10
IC (A)
20
30
5
10
15
IC (A)
20
25
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
500
450
400
350
Energy (µJ)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V
1000
EOFF
Swiching Time (ns)
tdOFF
100
tF
tdON
tR
10
300
250
200
150
100
50
0
25
50
75
100
125
EON
0
25
50
75
100
125
Rg (Ω)
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 12A; V
GE
= 15V
25
RG = 10Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 12A; V
GE
= 15V
25
20
20
RG = 22Ω
IRR (A)
IRR (A)
15
10
RG = 47Ω
RG = 100Ω
15
5
10
0
0
10
IF (A)
20
30
5
0
25
50
75
100
125
RG (
Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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