IRFHM8334TRPbF
V
DSS
V
GS
max
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
30
±20
9.0
13.5
7.1
25
nC
A
V
V
m
S
HEXFET
®
Power MOSFET
S
S
G
D
D
D
D
D
PQFN 3.3X3.3 mm
Applications
Control MOSFET for high frequency buck converter
Features
Low Thermal Resistance to PCB (<4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8334PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
13
Units
V
43
27
25
176
2.7
28
0.021
-55 to + 150
W
W/°C
°C
A
Notes
through
are on page 10
1
2016-2-23
IRFHM8334TRPbF
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
8.3
14
7.0
4.6
1180
260
110
Max.
–––
–––
9.0
13.5
2.35
–––
1.0
150
100
-100
–––
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 16A
V
V = V
GS
, I
D
= 25µA
mV/°C
DS
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 10V, I
D
= 20A
nC V
GS
= 10V, V
DS
= 15V, I
D
= 20A
nC
nC
ns
pF
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
BV
DSS
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
35
Units
mJ
Avalanche Characteristics
E
AS
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Conditions
MOSFET symbol
––– 25
showing the
A
integral reverse
––– 176
p-n junction diode.
––– 1.0
V T
J
= 25°C, I
S
= 20A, V
GS
= 0V
13
20
ns T
J
= 25°C, I
F
= 20A, V
DD
= 15V
19
29
nC di/dt = 380A/µs
Typ.
–––
–––
–––
–––
Max.
4.5
44
47
30
D
G
S
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
IRFHM8334TRPbF
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
2.5V
1
0.1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
1.8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 150°C
10
T J = 25°C
VDS = 15V
60µs
PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID = 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
C iss
C oss
Crss
VDS = 24V
VDS = 15V
VDS = 6.0V
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
1000
IRFHM8334TRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
1msec
100
T J = 150°C
10
Limited by
package
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
10
T J = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
0.01
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
50
Fig 8.
Maximum Safe Operating Area
2.8
VGS(th) , Gate threshold Voltage (V)
Limited By Source
Bonding Technology
40
ID, Drain Current (A)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
ID = 25µA
ID = 250µA
30
20
10
ID = 1.0mA
ID = 1.0A
0
25
50
75
100
125
150
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to–Source Breakdown Voltage
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
RDS(on), Drain-to -Source On Resistance (m
)
IRFHM8334TRPbF
30
ID = 20A
25
160
EAS , Single Pulse Avalanche Energy (mJ)
140
120
100
80
60
40
20
0
25
50
75
ID
TOP
4.3A
9.0A
BOTTOM 20A
20
15
T J = 125°C
10
T J = 25°C
5
0
5
10
15
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
2016-2-23
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