IR IGBT
IRGB4630DPbF
IRGIB4630DPbF
IRGP4630D(-E)PbF
IRGS4630DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
C
C
C
I
C
= 30A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
G
E
GC
C
E
G
C
E
V
CE(ON)
typ. = 1.65V @ I
C
= 18A
IRGB4630DPbF
TO-220AB
C
IRGP4630DPbF
TO-247AC
IRGP4630D-EPbF
TO-247AD
C
Applications
•
•
•
•
Industrial Motor Drive
Inverters
UPS
Welding
G
E
C
G
E
C
G
E
n-channel
G
Gate
IRGIB4630DPbF
TO-220AB Full-Pak
IRGS4630DPbF
D
2
Pak
C
Collector
E
Emitter
Features
Low V
CE(ON)
and switching losses
Square RBSOA and maximum junction temperature 175°C
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching
performance and high power capability
Positive V
CE (ON)
temperature coefficient and tight distribution
Excellent current sharing in parallel operation
of parameters
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
IRGB4630DPbF
IRGIB4630DPbF
IRGP4630DPbF
IRGP4630D-EPbF
IRGS4630DPbF
Package Type
TO-220AB
TO-220AB Full-Pak
TO-247AC
TO-247AD
D
2
Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
25
Tube
25
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Orderable Part Number
IRGB4630DPbF
IRGIB4630DPbF
IRGP4630DPbF
IRGP4630D-EPbF
IRGS4630DPbF
IRGS4630DTRRPbF
IRGS4630DTRLPbF
1
2015-11-23
IRGB/IB/P/S4630D/EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=15V
Clamped Inductive Load Current, V
GE
=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Max.
600
47
30
54
72
30
18
72
±20
±30
206
103
-40 to +175
300
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
R
θJC
Parameter
2
(IGBT) Thermal Resistance Junction-to-Case (D Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
2
(Diode) Thermal Resistance Junction-to-Case (D Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D
2
Pak,
TO-220 Full-Pak )
Thermal Resistance Case-to-Sink (TO-247)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D
2
Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
0.5
0.24
–––
–––
–––
–––
Max.
0.73
3.4
0.78
2.0
4.6
2.1
–––
–––
40
62
40
65
Units
R
θJC
R
θCS
°C/W
R
θJA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
0.40
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage
—
1.65
—
2.05
Collector-to-Emitter Saturation Voltage
V
CE(on)
—
2.15
Gate Threshold Voltage
4.0
—
V
GE(th)
Threshold Voltage Temp. Coefficient
—
-18
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
12
—
2.0
I
CES
Collector-to-Emitter Leakage Current
—
550
Gate-to-Emitter Leakage Current
I
GES
—
—
—
2.3
V
FM
Diode Forward Voltage Drop
—
1.6
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 100µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.95
I
C
= 18A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 18A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 18A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 500µA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 18A, PW = 80µs
25
µA V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
3.3
V
I
F
= 18A
—
I
F
= 18A, T
J
= 175°C
2
2015-11-23
IRGB/IB/P/S4630D/EPbF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Q
g
Total Gate Charge
—
35
Q
ge
Gate-to-Emitter Charge
—
10
Q
gc
Gate-to-Collector Charge
—
15
E
on
Turn-On Switching Loss
—
95
E
off
Turn-Off Switching Loss
—
350
Total Switching Loss
—
445
E
total
t
d(on)
Turn-On delay time
—
40
t
r
Rise time
—
25
Turn-Off delay time
—
105
t
d(off)
t
f
Fall time
—
25
Turn-On Switching Loss
—
285
E
on
E
off
Turn-Off Switching Loss
—
570
Total Switching Loss
—
855
E
total
t
d(on)
Turn-On delay time
—
40
t
r
Rise time
—
25
Turn-Off delay time
—
120
t
d(off)
Fall time
—
40
t
f
Input Capacitance
—
1040
C
ies
Output Capacitance
—
87
C
oes
C
res
Reverse Transfer Capacitance
—
32
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by R
θ
JC.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 22Ω.
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 18A
V
GE
= 15V
V
CC
= 400V
Conditions
µJ
I
C
= 18A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 25°C
Energy losses include tail & diode
reverse recovery
I
C
= 18A, V
CC
= 400V, V
GE
=15V
R
G
= 22Ω, L = 200µH, L
S
= 150nH,
T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 72A
V
CC
= 480V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
≤
600V
R
G
= 22Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 18A, V
GE
= 15V,
Rg = 22Ω, L = 200µH, L
S
= 150nH
ns
µJ
ns
pF
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5.0
—
—
—
FULL SQUARE
—
260
100
23
—
—
—
—
µs
µJ
ns
A
3
2015-11-23
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
