IRLS3813PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
HEXFET
®
Power MOSFET
G
S
D
V
DSS
R
DS(on) typ.
max
I
D (Silicon Limited)
I
D (Package Limited)
D
30V
1.60m
1.95m
247A
160A
S
G
D2Pak
IRLS3813PbF
D
S
Gate
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Drain
Source
Base part number
IRLS3813PbF
Package Type
D
2
-Pak
Orderable Part Number
IRLS3813PbF
IRLS3813TRLPbF
Absolute Maximum Rating
Symbol
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Max.
30
247
156
160
850
195
1.6
± 20
-55 to + 150
300
Max.
177
148
Typ.
–––
–––
Max.
0.64
40
Units
mJ
A
Units
°C/W
Units
V
A
W
W/°C
V
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
Symbol
Parameter
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient (PCB Mount)
R
JA
1
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January 23, 2014
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
IRLS3813PbF
Min.
30
–––
–––
1.35
–––
–––
–––
–––
–––
428
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
23
1.60
–––
–––
–––
–––
–––
0.9
–––
55
28
11
32
202
33
102
8020
1250
570
1560
1750
Typ.
–––
–––
–––
2.2
32
33
24
26
1.2
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1mA
1.95
m V
GS
= 10V, I
D
= 148A
2.35
V
V
DS
= V
GS
, I
D
= 150µA
1
100
100
-100
–––
–––
83
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
247
A
850
1.3
–––
–––
–––
–––
–––
–––
V
µA
nA
V
DS
= 10V, I
D
=148A
I
D
= 148A
nC
V
DS
= 15V
V
GS
= 4.5V
V
DD
= 20V
I
D
= 148A
ns
R
G
= 4.5
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz
V
GS
= 0V, VDS = 0V to 24V
V
GS
= 0V, VDS = 0V to 24V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 148A,V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
DD
= 26V
I
F
= 148A,
di/dt = 100A/µs
S
V
DS
=30V, V
GS
= 0V
V
DS
=30V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V/ns T
J
= 150°C,I
S
=148A,V
DS
= 30V
ns
nC
A
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source
bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 16µH, R
G
= 50, I
AS
= 148A, V
GS
=10V.
I
SD
148A, di/dt
865A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When
mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Pulse drain current is limited at 640A by source bonding technology.
2
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January 23, 2014
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
IRLS3813PbF
1000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
2.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 148A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
10
TJ = 25°C
VDS = 15V
1.0
1
2
3
4
60µs
PULSE WIDTH
5
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 148A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS = 24V
VDS = 15V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
40
80
120
160
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
January 23, 2014
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1000
1000
IRLS3813PbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
TJ = 150°C
100
ID, Drain-to-Source Current (A)
100µsec
100
1msec
10
TJ = 25°C
10
Limited by Package
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
10msec
0.1
10
VDS , Drain-to-Source Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
280
Fig 8.
Maximum Safe Operating Area
36
Id = 1.0mA
35
34
33
32
31
30
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Limited by Package
240
ID, Drain Current (A)
200
160
120
80
40
0
25
50
75
100
125
150
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
0.6
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to–Source Breakdown Voltage
800
0.5
0.4
Energy (µJ)
600
ID
TOP
17A
38A
BOTTOM 148A
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
oss
Stored Energy
4
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© 2014 International Rectifier
Fig 12.
Maximum Avalanche Energy Vs. Drain Current
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January 23, 2014
IRLS3813PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Single Avalanche Current vs. pulse Width
5
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January 23, 2014
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