INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST
SOFT RECOVERY DIODE
IRGR2B60KDPbF
C
V
CES
= 600V
I
C
= 3.7A, T
C
= 100°C
G
E
Features
Low V
CE (ON)
Non Punch Through IGBT technology
Low Diode V
F
10µs Short Circuit Capability
Square RBSOA
Ultra-soft Diode Reverse Recovery Characteristics
Positive V
CE (ON)
temperature co-efficient
Lead-free
Benefits
Benchmark Efficiency for Motor Control
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
T
J(MAX)
= 150°C
V
CE(ON)
typ. = 1.95V
n-channel
C
E
G
D-Pak
G
Gate
C
Collector
E
Emitter
Base part number
IRGR2B60KDPbF
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Orderable Part Number
IRGR2B60KDPbF
IRGR2B60KDTRPbF
IRGR2B60KDTRLPbF
IRGR2B60KDTRRPbF
Max.
600
6.3
3.7
8.0
8.0
6.3
3.7
8.0
±20
35
14
-55 to +150
Units
V
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
V
CES
I
C
@ T
C
= 25°C Continuous Collector Current
I
C
@ T
C
= 100°C Continuous Collector Current
I
CM
Pulse Collector Current, V
GE
= 15V
I
LM
Clamped Inductive Load Current, V
GE
= 20V
I
F
@ T
C
= 25°C Diode Continuous Forward Current
I
F
@ T
C
= 100°C Diode Continuous Forward Current
I
FM
Diode Maximum Forward Current
V
GE
Continuous Gate-to-Emitter Voltage
P
D
@ T
C
= 25°C Maximum Power Dissipation
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
Storage Temperature Range
T
STG
Soldering Temperature, for 10 sec.
Thermal Resistance
R
θJC
R
θJC
R
θJA
Parameter
(IGBT) Junction-to-Case (IGBT)
(Diode) Junction-to-Case (Diode)
Junction-to-Ambient (PCB Mount)
A
V
W
°C
300
(0.063 in.(1.6mm) from case)
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max.
3.56
7.70
50
Units
°C/W
1
www.irf.com
© 2012 International Rectifier
January 8, 2013
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Collector-to-Emitter Breakdown Voltage
600
—
V
(BR)CES
—
0.49
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
1.95
—
2.28
Gate Threshold Voltage
4.0
—
V
GE(th)
gfe
Forward Transconductance
—
1.2
I
CES
Collector-to-Emitter Leakage Current
—
0.5
—
23
V
FM
Diode Forward Voltage Drop
—
1.3
—
1.1
I
GES
Gate-to-Emitter Leakage Current
—
—
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge (turn-on)
—
8.0
Q
g
Q
ge
Gate-to-Emitter Charge (turn-on)
—
1.3
Gate-to-Collector Charge (turn-on)
—
4.0
Q
gc
Turn-On Switching Loss
—
74
E
on
E
off
Turn-Off Switching Loss
—
39
Total Switching Loss
—
113
E
tot
t
d(on)
Turn-On delay time
—
11
t
r
Rise time
—
8.7
Turn-Off delay time
—
150
t
d(off)
Fall time
—
56
t
f
Turn-On Switching Loss
—
120
E
on
E
off
Turn-Off Switching Loss
—
68
Total Switching Loss
—
188
E
tot
t
d(on)
Turn-On delay time
—
13
t
r
Rise time
—
6.8
t
d(off)
Turn-Off delay time
—
170
t
f
Fall time
—
110
Input Capacitance
—
110
C
ies
Output Capacitance
—
17
C
oes
Reverse Transfer Capacitance
—
4.0
C
res
RBSOA
SCSOA
Erec
trr
Irr
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
10
—
—
—
IRGR2B60KDPbF
Max. Units
—
V
—
V/°C
2.25
V
—
6.0
V
—
S
25
µA
—
1.6
V
—
±100
nA
Conditions
V
GE
= 0V, I
C
= 500µA
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 2.0A, V
GE
= 15V, T
J
= 25°C
I
C
= 2.0A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 50V, I
C
= 2.0A, PW = 20µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 2.0A
I
F
= 2.0A, T
J
= 150°C
V
GE
= ±20V
Max. Units
Conditions
12
I
C
= 2.0A
nC V
GE
= 15V
2.0
V
CC
= 400V
6.0
160
µJ
I
C
= 2.0A, V
CC
= 400V, V
GE
= 15V
120
280
R
G
= 100, L = 7.1mH, T
J
= 25°C
Energy losses include tail & diode
30
ns reverse recovery
25
170
75
—
µJ
I
C
= 2.0A, V
CC
=400V, V
GE
=15V
—
—
R
G
= 100, L = 7.1mH, T
J
= 150°C
Energy losses include tail & diode
—
ns reverse recovery
—
—
—
—
V
GE
= 0V
pF V
CC
= 30V
—
f = 1.0Mhz
—
T
J
= 150°C, I
C
= 8.0A
FULL SQUARE
V
CC
= 480V, Vp
≤
600V
Rg = 100, V
GE
= +20V to 0V
—
—
µs T
J
= 150°C, Vp
≤
600V, Rg=330
V
CC
= 360V, V
GE
= +15V to 0V
19
30
µJ
T
J
= 150°C
V
CC
= 400V, I
F
= 2.0A, L = 7.1mH
45
68
ns
5.8
8.7
A
V
GE
= 15V, Rg = 100
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200µH, R
G
= 100.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
of approximately 90°C.
FBSOA operating conditions only.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
2
www.irf.com
© 2012 International Rectifier
January 8, 2013
6
IRGR2B60KDPbF
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 14W
5
Load Current ( A )
4
Square Wave:
V
CC
3
I
2
Diode as specified
1
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
7
6
5
Ptot (W)
35
30
25
20
15
10
5
0
IC (A)
4
3
2
1
0
25
50
75
100
125
150
T C (°C)
25
50
75
100
125
150
T C (°C)
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
10
1msec
1
IC (A)
IC (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
10
10µsec
100µsec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
150°C; V
GE
= 15V
3
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© 2012 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
January 8, 2013
10
10
IRGR2B60KDPbF
8
ICE (A)
4
ICE (A)
6
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
4
2
2
0
0
2
4
6
8
10
VCE (V)
0
0
2
4
6
8
10
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
10
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
10
8
8
-40°C
25°C
150°C
ICE (A)
6
6
IF (A)
4
4
2
2
0
0
2
4
6
8
10
VCE (V)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20µs
10
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
10
8
ICE = 1.0A
ICE = 2.0A
ICE = 4.0A
4
8
ICE = 1.0A
ICE = 2.0A
ICE = 4.0A
VCE (V)
VCE (V)
6
6
4
2
2
0
5
10
VGE (V)
15
20
0
5
10
VGE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
www.irf.com
© 2012 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
January 8, 2013
10
12
10
8
ICE (A)
IRGR2B60KDPbF
8
ICE = 1.0A
ICE = 2.0A
ICE = 4.0A
VCE (V)
6
6
4
T J = 25°C
4
T J = 150°C
2
2
0
5
10
VGE (V)
15
20
4
6
8
10
VGE (V)
12
14
16
0
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 150°C
250
1000
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
tdOFF
200
Swiching Time (ns)
EON
Energy (µJ)
100
150
tF
100
EOFF
tdON
10
tR
1
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC (A)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 7.1mH; V
CE
= 400V, R
G
= 100; V
GE
= 15V
220
200
180
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 7.1mH; V
CE
= 400V, R
G
= 100; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Energy (µJ)
160
140
120
100
80
60
0
100
EON
100
tF
tdON
EOFF
10
tR
1
200
300
400
500
0
100
200
300
400
500
RG ()
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 7.1mH; V
CE
= 400V, I
CE
= 2.0A; V
GE
= 15V
5
www.irf.com
© 2012 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 7.1mH; V
CE
= 400V, I
CE
= 2.0A; V
GE
= 15V
January 8, 2013
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