IRFB4137PbF
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
G
D
V
DSS
R
DS(on) typ.
max
300V
56m
69m
38A
S
I
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
TO-220Pak
G
D
G
S
D
S
Gate
Standard Pack
Form
Quantity
Tube
50
Drain
Source
Base part number
IRFB4137PbF
Package Type
TO-220Pak
Orderable Part Number
IRFB4137PbF
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
38
27
152
341
2.3
± 20
8.9
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
300
10 lbf·in (1.1 N·m)
414
Typ.
–––
0.50
–––
Max.
0.44
–––
62
mJ
Units
°C/W
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
1
www.irf.com
© 2012 International Rectifier
October 30, 2012
IRFB4137PbF
Parameter
Min.
300
–––
–––
3.0
–––
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.24
56
–––
–––
–––
–––
–––
1.3
–––
83
28
26
18
23
34
20
5168
300
77
196
265
–––
–––
69
5.0
20
250
100
-100
–––
–––
125
42
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, I
D
= 3.5mA
m V
GS
= 10V, I
D
= 24A
V
µA
nA
V
DS
= 50V, I
D
=24A
I
D
= 24A
nC
V
DS
= 150V
V
GS
= 10V
V
DD
= 195V
I
D
= 24A
ns
R
G
= 2.2
V
GS
= 10V
S
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
pF
V
GS
= 0V, VDS = 0V to 240V
See Fig.11
V
GS
= 0V, VDS = 0V to 240V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
V
DS
= V
GS
, I
D
= 250µA
V
DS
=300 V, V
GS
= 0V
V
DS
=300V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Diode Characteristics
Typ. Max. Units
–––
–––
–––
302
379
1739
2497
13
38
A
152
1.3
–––
–––
–––
–––
–––
V
ns
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
Notes:
D
S
T
J
= 25°C,I
S
= 24A,V
GS
= 0V
T
J
= 25°C
V
DD
= 255V
T
J
= 125°C
I
F
= 24A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting T
J
= 25°C, L = 1.56mH, R
G
= 50, I
AS
= 24A, V
GS
=10V.
I
SD
24A,
di/dt
1771A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
Ris measured at T
J
approximately 90°C
2
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© 2012 International Rectifier
October 30, 2012
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
IRFB4137PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
5.0V
1
0.1
5.0V
1
60µs
PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 24A
3.0
2.5
2.0
1.5
1.0
0.5
ID, Drain-to-Source Current(A)
VGS = 10V
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
0.1
2
4
6
8
10
12
14
60µs
PULSE WIDTH
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID = 24A
VDS = 240V
VDS = 150V
VDS= 60V
10000
C, Capacitance (pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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© 2012 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
October 30, 2012
1000
1000
IRFB4137PbF
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
ISD, Reverse Drain Current (A)
100
TJ = 175°C
ID, Drain-to-Source Current (A)
100
100µsec
1msec
10
10msec
10
TJ = 25°C
1
DC
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
0.01
VDS , Drain-to-Source Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
42
35
Fig 8.
Maximum Safe Operating Area
370
360
350
340
330
320
310
300
290
280
270
-60
-20
20
60
100
140
180
TJ , Temperature ( °C )
Id = 3.5mA
ID, Drain Current (A)
28
21
14
7
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
9.0
Fig 10.
Drain-to–Source Breakdown Voltage
6.0
VGS(th), Gate threshold Voltage (V)
8.0
7.0
6.0
5.0
Energy (µJ)
5.0
4.0
3.0
2.0
1.0
0.0
-50
0
50
100 150 200 250 300 350
4.0
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.0
-75
-25
25
75
125
175
225
TJ , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
oss
Stored Energy
4
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© 2012 International Rectifier
Fig 12.
Threshold Voltage vs. Temperature
October 30, 2012
IRFB4137PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
60
IF = 16A
VR = 255V
40
TJ = 25°C
TJ = 125°C
50
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
IRRM (A)
30
IRRM (A)
40
30
20
20
10
0
200
400
600
800
1000
diF /dt (A/µs)
10
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 14.
Typical Recovery Current vs. dif/dt
3500
Fig 15.
Typical Recovery Current vs. dif/dt
5000
4500
4000
3000
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
QRR (nC)
QRR (nC)
2500
3500
3000
2500
2000
1500
2000
1500
1000
0
200
400
600
800
1000
diF /dt (A/µs)
1000
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 16.
Typical Stored Charge vs. dif/dt
5
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© 2012 International Rectifier
Fig 17.
Typical Stored Charge vs. dif/dt
October 30, 2012
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