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IRF8308MPbF

RoHs Compliant Containing No Lead and Bromide

Typical values (unless otherwise specified)

l

Low Profile (<0.7 mm)

V

DSS

V

GS

R

DS(on)

R

DS(on)

l

Dual Sided Cooling Compatible

30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

l

Ultra Low Package Inductance

Q

g tot

Q

gd

Q

gs2

Q

rr

Q

oss

V

gs(th)

l

Optimized for High Frequency Switching

28nC

8.2nC 3.5nC

34nC

20nC

1.8V

l

Ideal for CPU Core DC-DC Converters

l

Optimized for Sync. FET socket of Sync. Buck Converter

l

Low Conduction and Switching Losses

l

Compatible with existing Surface Mount Techniques

l

100% Rg tested

l

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

DirectFET Power MOSFET

MX

MT

MP

DirectFET ISOMETRIC

SQ

SX

ST

MQ

MX

Description

The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

TM

packaging to achieve the lowest on-

state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries

used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is

followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power

systems, improving previous best thermal resistance by 80%.

The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.

The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher

frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-

induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Orderable part number

IRF8308MTRPbF

IRF8308MTR1PbF

Package Type

DirectFET Medium Can

Standard Pack

Form

Quantity

Tape and Reel

4800

Tape and Reel

1000

Note

"TR" suffix

"TR1" suffix EOL notice # 264

Absolute Maximum Ratings

Parameter

V

DS

V

GS

I

D

@ T

A

= 25°C

I

D

@ T

A

= 70°C

I

D

@ T

C

= 25°C

I

DM

E

AS

I

AR

8

Typical R DS (on) (mΩ)

Max.

Units

V

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

g

e

f

Ãg

h

VGS, Gate-to-Source Voltage (V)

30

±20

27

21

150

212

12

21

12

10

8

6

4

2

0

20

40

60

ID= 21A

VDS = 24V

VDS= 15V

A

mJ

A

ID = 27A

6

4

2

0

2.0

4.0

6.0

8.0

VGS, Gate-to-Source Voltage (V)

10.0

TJ = 125°C

TJ = 25°C

80

Notes:

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

Fig 1.

Typical On-Resistance Vs. Gate Voltage

QG Total Gate Charge (nC)

Fig 2.

Typical Total Gate Charge vs Gate-to-Source Voltage

T

C

measured with thermocouple mounted to top (Drain) of part.

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

J

= 25°C, L = 0.051mH, R

G

= 25Ω, I

AS

= 21A.

1

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IRF8308MPbF

Static @ T

J

= 25°C (unless otherwise specified)

Parameter

BV

DSS

ΔΒV

DSS

/ΔT

J

R

DS(on)

V

GS(th)

ΔV

GS(th)

/ΔT

J

I

DSS

I

GSS

gfs

Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q

gs2

+ Q

gd

)

Output Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

30

–––

1.35

–––

130

–––

Typ. Max. Units

–––

22

1.90

2.70

1.8

-6.1

–––

28

8.4

3.5

8.2

7.9

12

20

1.2

11

19

23

16

4404

885

424

–––

V

Conditions

V

GS

= 0V, I

D

= 250μA

mV/°C Reference to 25°C, I

D

= 1mA

2.50

mΩ V

GS

= 10V, I

D

= 27A

V

GS

= 4.5V, I

D

= 21A

3.50

2.35

–––

1.0

150

100

-100

–––

42

–––

2.2

–––

pF

V

GS

= 0V

V

DS

= 15V

ƒ = 1.0MHz

ns

nC

Ω

V

mV/°C

μA

nA

S

V

DS

= V

GS

, I

D

= 100μA

V

DS

= 24V, V

GS

= 0V

i

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

V

GS

= 20V

V

GS

= -20V

V

DS

= 15V, I

D

=21A

V

DS

= 15V

nC

V

GS

= 4.5V

I

D

= 21A

See Fig. 15

V

DS

= 16V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 21A

R

G

= 1.8Ω

Ãi

Diode Characteristics

Parameter

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min.

–––

Typ. Max. Units

–––

20

34

150

A

212

1.0

30

51

V

ns

nC

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 21A, V

GS

= 0V

T

J

= 25°C, I

F

=21A

di/dt = 300A/μs

Ãg

i

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Pulse width

≤

400μs; duty cycle

≤

2%.

2

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IRF8308MPbF

Absolute Maximum Ratings

P

D

@T

A

= 25°C

P

D

@T

A

= 70°C

P

D

@T

C

= 25°C

T

P

T

J

T

STG

Power Dissipation

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

e

f

Parameter

Max.

2.8

1.8

89

270

-40 to + 150

Units

W

°C

Thermal Resistance

R

θJA

R

θJA

R

θJA

R

θJC

R

θJ-PCB

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Linear Derating Factor

100

el

jl

kl

fl

Parameter

Typ.

–––

12.5

20

–––

1.0

0.022

Max.

45

–––

1.4

–––

Units

°C/W

eÃ

W/°C

D = 0.50

Thermal Response ( ZthJA )

10

0.20

0.10

0.05

1

0.02

0.01

τ

J

τ

J

τ

1

τ

1

R

1

R

1

τ

2

R

2

R

2

R

3

R

3

τ

3

R

4

R

4

τ

a

τ

2

τ

3

τ

4

τ

4

0.1

SINGLE PULSE

( THERMAL RESPONSE )

0.01

1E-006

1E-005

0.0001

0.001

0.01

Ci=

τi/Ri

Ci i/Ri

Ri (°C/W)

τι

(sec)

0.99292 0.000074

2.171681 0.007859

24.14602

0.959

17.69469

32.6

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 3.

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Used double sided cooling, mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Notes:

R

θ

is measured at

T

J

of approximately 90°C.

Surface mounted on 1 in. square Cu

(still air).

Mounted to a PCB

with

small clip heatsink (still air)

Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air)

February 24, 2014

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IRF8308MPbF

1000

TOP

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

1000

TOP

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

ID, Drain-to-Source Current (A)

100

BOTTOM

ID, Drain-to-Source Current (A)

100

BOTTOM

10

2.5V

1

10

2.5V

≤60μs

PULSE WIDTH

Tj = 25°C

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

≤60μs

PULSE WIDTH

Tj = 150°C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 4.

Typical Output Characteristics

1000

2.0

Fig 5.

Typical Output Characteristics

ID = 27A

ID, Drain-to-Source Current

(Α)

VGS = 4.5V

Typical RDS(on) (Normalized)

100

TJ = 150°C

TJ = 25°C

10

TJ = -40°C

VGS = 10V

1.5

1.0

1

VDS = 10V

≤60μs

PULSE WIDTH

0.1

1.5

2.0

2.5

3.0

3.5

4.0

0.5

-60 -40 -20 0

20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

VGS, Gate-to-Source Voltage (V)

Fig 6.

Typical Transfer Characteristics

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Fig 7.

Normalized On-Resistance vs. Temperature

6

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

10000

Ciss

Typical RDS (on) (mΩ)

Coss = Cds + Cgd

5

C, Capacitance(pF)

4

1000

Coss

Crss

3

2

TJ = 25°C

100

1

10

VDS, Drain-to-Source Voltage (V)

100

1

0

20

40

60

80

100

Fig 8.

Typical Capacitance vs.Drain-to-Source Voltage

4

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Fig 9.

Typical On-Resistance Vs.

Drain Current and Gate Voltage

February 24, 2014

ID, Drain Current (A)

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IRF8308MPbF

1000.0

ID, Drain-to-Source Current (A)

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

ISD, Reverse Drain Current (A)

100.0

TJ = 150°C

TJ = 25°C

TJ = -40°C

100

10.0

10

10msec

1

TA = 25°C

Tj = 150°C

Single Pulse

0.1

1.0

100μsec

1.0

VGS = 0V

0.1

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

1msec

0.1

10.0

100.0

VDS , Drain-toSource Voltage (V)

Fig 10.

Typical Source-Drain Diode Forward Voltage

Typical VGS(th) Gate threshold Voltage (V)

150

2.5

Fig11.

Maximum Safe Operating Area

ID, Drain Current (A)

2.0

100

ID = 100μA

1.5

50

1.0

0

25

50

75

100

125

150

TC , Case Temperature (°C)

0.5

-75

-50

-25

0

25

50

75

100

125

150

TJ , Junction Temperature ( °C )

Fig 12.

Maximum Drain Current vs. Case Temperature

EAS, Single Pulse Avalanche Energy (mJ)

50

Fig 13.

Typical Threshold Voltage vs. Junction

Temperature

I D

TOP

7.2A

8.4A

BOTTOM

21A

40

30

20

10

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

Fig 14.

Maximum Avalanche Energy Vs. Drain Current

5

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IRF8308M

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