IRF7769L1TRPbF
Applications
RoHS
Compliant, Halogen Free
Lead-Free
(Qualified up to 260°C Reflow)
Ideal
for High Performance Isolated Converter
Primary Switch Socket
Optimized
for Synchronous Rectification
Low
Conduction Losses
High
Cdv/dt Immunity
Low
Profile (<0.7mm)
Dual
Sided Cooling Compatible
Compatible
with existing Surface Mount Techniques
Industrial
Qualified
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
Typical values (unless otherwise specified)
DirectFET™ Power MOSFET
V
GS
±20V max
V
DSS
100V min
R
DS(on)
2.8m@ 10V
Q
g
tot
Q
gd
110nC
S
S
S
S
S
S
V
gs(th)
2.7V
200nC
D
G
S
S
D
DirectFET™ ISOMETRIC
L8
L6
L8
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note
AN-1035
is followed regarding the manufacturing methods
and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Description
Ordering Information
Part number
IRF7769L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
“TR” suffix
Max.
100
±20
124
88
20
375
500
260
74
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
12.00
Typical R DS (on), (m
(
DS(on) m
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
3.10
A
mJ
A
10.00
8.00
6.00
4.00
2.00
0.00
2.0
ID = 74A
3.00
TA= 25°C
VGS = 7.0V
VGS = 8.0V
VGS = 10V
2.90
VGS = 15V
2.80
20
40
60
80
100
TJ = 25°C
4.0
6.0
8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Typical R
TJ = 125°C
ID, Drain Current (A)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.09mH, R
G
= 25, I
AS
= 74A.
1
2016-10-14
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2 +
Q
gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
410
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
–––
0.02
2.8
2.7
-10
–––
–––
–––
–––
–––
200
30
9.0
110
51
119
53
1.5
44
32
92
–––
–––
3.5
4.0
–––
20
250
100
-100
–––
300
–––
–––
165
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
mV/°C
µA
nA
S
nC
nC
IRF7769L1TRPbF
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 74A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100 V, V
GS
= 0V
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 74A
V
DS
= 50V
V
GS
= 10V
I
D
= 74A
See Fig.9
V
DS
= 16V,V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 74A
R
G
= 1.8
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
=0V, V
DS
= 1.0V,ƒ =1.0MHz
V
GS
=0V, V
DS
= 80V,ƒ =1.0MHz
Units
A
–––
–––
–––
–––
–––
–––
75
220
500
1.3
112
330
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 74A,V
GS
= 0V
T
J
= 25°C ,I
F
= 74A,V
DD
= 50V
di/dt = 100A/µs
ns
–––
41
–––
––– 11560 –––
––– 1240 –––
–––
–––
–––
Min.
–––
590
6665
690
–––
–––
–––
pF
Diode Characteristics
Typ. Max.
–––
124
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%
2
2016-10-14
IRF7769L1TRPbF
Max.
125
63
3.3
270
-55 to + 175
Units
W
°C
Max.
45
–––
–––
1.2
0.4
Units
Absolute Maximum Ratings
Symbol
Parameter
P
D
@T
C
= 25°C Power Dissipation
P
D
@T
C
= 100°C Power Dissipation
P
D
@T
A
= 25°C Power Dissipation
Peak Soldering Temperature
T
P
Operating Junction and
T
J
Storage Temperature Range
T
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
qJA
Junction-to-Ambient
R
qJA
Junction-to-Ambient
R
qJA
Junction-to-Can
R
qJC
Junction-to-PCB Mounted
R
qJA-PCB
10
Thermal Response ( Z thJC ) °C/W
Typ.
–––
12.5
20
–––
–––
°C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
J
1
1
0.1
Ri (°C/W)
R
1
R
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
2
3
4
4
C
i
(sec)
0.000171
0.053914
0.006099
0.036168
0.1080
0.6140
0.4520
1.47e-05
0.01
Ci=
iRi
Ci=
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effec ve Transient Thermal Impedance, Junc on‐to‐Case
Notes:
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
3
2016-10-14
IRF7769L1TRPbF
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
3.5V
0.1
0.1
1
3.5V
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
60µs PULSE WIDTH
Tj = 25°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 25V
ID, Drain-to-Source Current (A)
100
60µs PULSE WIDTH
ID = 74A
VGS = 10V
2.0
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1.5
1
1.0
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
ID= 74A
VDS = 80V
VDS = 50V
VDS = 20V
12
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
100
0
50
100
150
200
250
300
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-10-14
1000
IRF7769L1TRPbF
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100
1000
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
100
DC
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
100µsec
10
1
1
1msec
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
10
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
125
Fig 11.
Maximum Safe Operating Area
4.0
VGS(th) Gate threshold Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 1.0A
ID = 1.0mA
ID = 250µA
100
ID , Drain Current (A)
75
50
25
0
25
50
75
100
125
150
175
-75
-50 -25
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1200
Fig 13.
Typical Threshold Voltage vs. Junction Temperature
ID
EAS, Single Pulse Avalanche Energy (mJ)
1000
13A
20A
BOTTOM
74A
TOP
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
2016-10-14
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
