IRFH8311PbF
V
DS
V
gs
max
30
± 20
2.1
3.2
30
80
V
V
mΩ
nC
A
HEXFET
®
Power MOSFET
R
DS(on) max
(@V
GS
= 10V)
(@V
GS
= 4.5V)
Q
g typ.
I
D
(@T
c(Bottom)
= 25°C)
i
PQFN 5X6 mm
Applications
•
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8311TRPBF
IRFH8311TR2PBF
Standard Pack
Orderable part number
Note
Form
Quantity
PQFN 5mm x 6mm Tape and Reel 4000
IRFH8311TRPBF
PQFN 5mm x 6mm Tape and Reel
400
IRFH8311TR2PBF
EOL notice #259
Package Type
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
30
± 20
32
169
26
Units
V
g
Power Dissipation
g
Power Dissipation
c
hi
107
hi
80
i
400
3.6
96
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
0.029
-55 to + 150
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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June 2, 2015
IRFH8311PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
83
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
1.70
2.60
1.8
-6.6
–––
–––
–––
–––
–––
66
30
9.7
3.9
8.6
7.8
12.5
21
0.6
21
26
21
12
4960
1065
455
Max. Units
–––
–––
2.10
3.20
2.35
–––
1
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
nA
S
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1.0mA
mΩ
V
mV/°C
μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
V
DS
= V
GS
, I
D
= 100μA
e
= 16A
e
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8Ω
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
326
20
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
22
47
Max. Units
80
Conditions
MOSFET symbol
D
i
A
V
ns
nC
showing the
integral reverse
G
S
Ã
400
1.0
33
71
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 390 A/μs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
f
Junction-to-Case
f
Junction-to-Case
Parameter
g
Junction-to-Ambient
g
Junction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.3
30
35
0.99
Units
°C/W
2
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2015 International Rectifier
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June 2, 2015
IRFH8311PbF
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.8V
1
2.8V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
T J = 25°C
10
1.0
1
2
3
VDS = 15V
≤60μs
PULSE WIDTH
4
5
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
VDS= 24V
VDS= 15V
VDS= 6.0V
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
June 2, 2015
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IRFH8311PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
1000
100
T J = 150°C
100
1msec
10
T J = 25°C
10
Limited by
Package
10msec
1
VGS = 0V
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.1
0
Tc = 25°C
Tj = 150°C
Single Pulse
1
DC
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
180
Limited By Package
Fig 8.
Maximum Safe Operating Area
2.8
VGS(th) , Gate threshold Voltage (V)
160
140
ID, Drain Current (A)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
120
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.01
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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June 2, 2015
IRFH8311PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
6
ID = 20A
5
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
ID
TOP
7.0A
9.9A
BOTTOM 20A
4
T J = 125°C
3
2
T J = 25°C
1
0
5
10
15
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2015 International Rectifier
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June 2, 2015
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