74HC366; 74HCT366
Hex buffer/line driver; 3-state; inverting
Rev. 03 — 21 November 2006
Product data sheet
1. General description
The 74HC366; 74HCT366 is a high-speed Si-gate CMOS device and is pin compatible
with Low-power Schottky TTL (LSTTL).
The 74HC366; 74HCT366 has six inverting buffer/line drivers with 3-state outputs. The
3-state outputs (nY) are controlled by the output enable inputs (OE1, OE2). A HIGH on
OEn causes the outputs to assume a high-impedance OFF-state.
The 74HC366; 74HCT366 is functionally identical to:
•
74HC365; 74HCT365, but has inverted outputs
2. Features
I
Inverting outputs
I
Complies with JEDEC standard no. 7A
I
ESD protection:
N
HBM EIA/JESD22-A114-D exceeds 2000 V
N
MM EIA/JESD22-A115-A exceeds 200 V
I
Specified from
−40 °C
to +85
°C
and from
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC366
74HC366D
74HC366N
74HC366PW
74HCT366
74HCT366D
74HCT366DB
74HCT366N
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SO16
SSOP16
DIP16
TSSOP16
plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
plastic shrink small outline package; 16 leads; body width
5.3 mm
plastic dual in-line package; 16 leads (300 mil); long body
plastic thin shrink small outline package; 16 leads; body
width 4.4 mm
SOT338-1
SOT38-1
SOT403-1
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SO16
DIP16
TSSOP16
plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
plastic dual in-line package; 16 leads (300 mil); long body
plastic thin shrink small outline package; 16 leads; body
width 4.4 mm
SOT38-1
SOT403-1
Description
Version
Type number
74HCT366PW
−40 °C
to +125
°C
NXP Semiconductors
74HC366; 74HCT366
Hex buffer/line driver; 3-state; inverting
4. Functional diagram
2
1A
1Y
3
1A
5
2A
7
3A
9
4A
11
5A
13
6A
6Y
5Y
4Y
2
4
6
10
12
OE1
14
001aaf581
4
2A
2Y
1Y
6
3A
3Y
2Y
1
15
&
EN
10
4A
5A
4Y
5Y
3Y
12
3
5
7
9
11
13
001aaf582
14
6A
6Y
1
15
OE1
OE2
001aaf583
OE2
Fig 1. Functional diagram
Fig 2. Logic symbol
Fig 3. IEC logic symbol
buffer/line driver 1
1A
V
CC
1Y
OE1
OE2
2A
GND
buffer/line driver 2
buffer/line driver 3
buffer/line driver 4
buffer/line driver 5
buffer/line driver 6
001aaf584
2Y
3A
3Y
4A
4Y
5A
5Y
6A
6Y
Fig 4. Logic diagram
74HC_HCT366_3
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 03 — 21 November 2006
2 of 19
NXP Semiconductors
74HC366; 74HCT366
Hex buffer/line driver; 3-state; inverting
5. Pinning information
5.1 Pinning
74HC366
74HCT366
OE1
1A
1Y
2A
2Y
3A
3Y
GND
1
2
3
4
5
6
7
8
001aaf580
16 V
CC
15 OE2
14 6A
13 6Y
12 5A
11 5Y
10 4A
9
4Y
Fig 5. Pin configuration
5.2 Pin description
Table 2.
Symbol
OE1
1A
1Y
2A
2Y
3A
3Y
GND
4Y
4A
5Y
5A
6Y
6A
OE2
V
CC
Pin description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
output enable input 1 (active LOW)
data input 1
data output 1
data input 2
data output 2
data input 3
data output 3
ground (0 V)
data output 4
data input 4
data output 5
data input 5
data output 6
data input 6
output enable input 2 (active LOW)
supply voltage
74HC_HCT366_3
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 03 — 21 November 2006
3 of 19
NXP Semiconductors
74HC366; 74HCT366
Hex buffer/line driver; 3-state; inverting
6. Functional description
Table 3.
Control
OE1
L
L
X
H
[1]
Function table
[1]
Input
OE2
L
L
H
X
nA
L
H
X
X
Output
nY
H
L
Z
Z
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
DIP16 package
SO16 package
SSOP16 package
TSSOP16 package
[1]
[2]
[3]
For DIP16 package: P
tot
derates linearly with 12 mW/K above 70
°C.
For SO16 package: P
tot
derates linearly with 8 mW/K above 70
°C.
For SSOP16 and TSSOP16 packages: P
tot
derates linearly with 5.5 mW/K above 60
°C.
[1]
[2]
[3]
[3]
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
−0.5
V to (V
CC
+ 0.5 V)
Min
−0.5
-
-
-
-
-
−65
-
-
-
-
Max
+7
±20
±20
±35
70
−70
+150
750
500
500
500
Unit
V
mA
mA
mA
mA
mA
°C
mW
mW
mW
mW
8. Recommended operating conditions
Table 5.
74HC366
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
ambient temperature
2.0
0
0
−40
5.0
-
-
+25
6.0
V
CC
V
CC
V
V
V
Recommended operating conditions
Conditions
Min
Typ
Max
Unit
Symbol Parameter
+125
°C
74HC_HCT366_3
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 03 — 21 November 2006
4 of 19
NXP Semiconductors
74HC366; 74HCT366
Hex buffer/line driver; 3-state; inverting
Table 5.
t
r
Recommended operating conditions
…continued
Conditions
inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
-
-
-
-
-
-
4.5
0
0
−40
inputs; V
CC
= 4.5 V
inputs; V
CC
= 4.5 V
-
-
-
6.0
-
-
6.0
-
5.0
-
-
+25
6.0
6.0
1000 ns
500
400
ns
ns
Min
Typ
Max
Unit
rise time
Symbol Parameter
t
f
fall time
inputs
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
1000 ns
500
400
5.5
V
CC
V
CC
500
500
ns
ns
V
V
V
ns
ns
74HCT366
V
CC
V
I
V
O
T
amb
t
r
t
f
supply voltage
input voltage
output voltage
ambient temperature
rise time
fall time
+125
°C
9. Static characteristics
Table 6.
Static characteristics 74HC366
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−6.0
mA; V
CC
= 4.5 V
I
O
=
−7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
74HC_HCT366_3
Conditions
Min
1.5
3.15
4.2
-
-
-
-
1.9
4.4
5.9
3.98
5.48
-
-
-
-
-
-
Typ
1.2
2.4
3.2
0.8
2.1
2.8
-
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
Max
-
-
-
0.5
1.35
1.8
-
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
±0.1
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
input leakage current
V
I
= V
CC
or GND; V
CC
= 6.0 V
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 03 — 21 November 2006
5 of 19
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
