PD - 97500A
IRF6201PbF
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
20
2.45
2.75
130
27
V
mΩ
mΩ
nC
A
6
6
6
*
HEXFET
®
Power MOSFET
'
'
'
'
R
DS(on) max
(@V
GS
= 2.5V)
Q
g (typical)
I
D
(@T
A
= 25°C)
SO-8
Applications
•
OR-ing or hot-swap MOSFET
•
Battery operated DC motor
inverter MOSFET
•
System/Load switch
Features and Benefits
Features
Low R
DSon
(≤ 2.45mΩ @ Vgs = 4.5V)
Industry-standard SO-8 package
RoHS compliant containing no lead, no bromide and no halogen
Benefits
Lower conduction losses
results in
Multi-vendor compatibility
⇒
Environmentally Friendly
Orderable part number
IRF6201PbF
IRF6201TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
4000
Tape and Reel
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Max.
20
±12
27
22
110
2.5
1.6
0.02
-55 to + 150
Units
V
e
Power Dissipation
e
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
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1
11/11/2010
IRF6201PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
4.6
1.90
2.10
–––
–––
–––
–––
–––
130
16
60
29
100
320
265
8555
1735
1290
Max.
–––
–––
2.45
2.75
1.1
1.0
150
100
-100
195
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 27A
mΩ
V
GS
= 2.5V, I
D
= 22A
d
d
V
µA
nA
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
GS
= 4.5V
V
DS
= 10V
I
D
= 22A
V
DD
= 20V, V
GS
= 4.5V
nC
ns
I
D
= 1.0A
R
G
= 6.8Ω
See Figs. 10a & 10b
V
GS
= 0V
V
DS
= 16V
ƒ = 1.0MHz
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
82
180
Max.
2.5
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
S
D
Ã
110
1.2
120
270
Typ.
–––
–––
V
ns
nC
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.5A, V
DD
= 16V
di/dt = 100/µs
Max.
20
50
d
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
d
e
f
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
approximately 90°C.
2
IRF6201PbF
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
1000
TOP
VGS
10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
1.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
1.3V
1.3V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.6
ID = 27A
1.4
VGS = 4.5V
ID, Drain-to-Source Current (A)
100
1.2
10
TJ = 150°C
1
T J = 25°C
1.0
0.8
0.1
0
1
VDS = 10V
≤60µs
PULSE WIDTH
2
3
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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IRF6201PbF
100000
14.0
ID= 22A
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 16V
VDS= 10V
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
DC
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0
0.1
10msec
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
IRF6201PbF
30
V
DS
25
ID, Drain Current (A)
R
D
V
GS
R
G
D.U.T.
+
20
15
10
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
0
25
50
75
100
125
150
T C , Case Temperature (°C)
V
DS
90%
Fig 9.
Maximum Drain Current vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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