IRLH5030PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
100
9.9
44
1.2
88
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
mb
= 25°C)
h
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Features
Low R
DSon
(≤9.0mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLH5030PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRLH5030TRPBF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
mb
= 25°C
I
D
@ T
mb
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
mb
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
±16
13
11
88
56
Units
V
g
Power Dissipation
g
c
h
h
A
400
3.6
156
0.029
-55 to + 150
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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May 19, 2015
IRLH5030PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
100
–––
–––
–––
1.0
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.10
7.2
7.9
–––
-5.9
–––
–––
–––
–––
–––
94
44
7.7
4.0
22
10.3
26
20
1.2
21
72
41
41
5185
300
150
Conditions
Max. Units
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
9.0
mΩ
V
GS
= 4.5V, I
D
= 50A
9.9
2.5
V
V
DS
= V
GS
, I
D
= 150μA
––– mV/°C
V
DS
= 100V, V
GS
= 0V
20
μA
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
250
V
GS
= 16V
100
nA
-100
V
GS
= -16V
–––
S V
DS
= 50V, I
D
= 50A
–––
nC V
GS
= 10V, V
DS
= 50V, I
D
= 50A
66
–––
V
DS
= 50V
–––
V
GS
= 4.5V
nC
I
D
= 50A
–––
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
ns
V
DD
= 50V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
Max.
230
50
Conditions
MOSFET symbol
showing the
integral reverse
G
S
pF
Avalanche Characteristics
E
AS
I
AR
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
d
Min.
–––
–––
Typ.
–––
–––
Units
mJ
A
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
100
A
400
D
Ã
–––
–––
1.0
V
–––
32
48
ns
–––
190
285
nC
Time is dominated by parasitic Inductance
Parameter
Typ.
0.5
–––
–––
–––
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 50V
di/dt = 500A/μs
e
eÃ
Thermal Resistance
Max.
0.8
15
35
33
°C/W
Units
R
θJC-mb
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Mounting Base
Junction-to-Case
g
Junction-to-Ambient
g
Junction-to-Ambient
f
2
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May 19, 2015
IRLH5030PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
2.7V
2.7V
≤
60μs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 50A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1.5
1
VDS = 25V
≤60μs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
9
10
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
10000
Ciss
VDS= 80V
VDS= 50V
VDS= 20V
1000
Coss
Crss
100
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
40
80
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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May 19, 2015
IRLH5030PbF
1000
10000
1000
100
10
10msec
1
0.1
0.01
1.4
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
DC
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
10
T J = 25°C
1msec
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
80
ID, Drain Current (A)
2.0
60
1.5
ID = 150μA
ID = 500μA
1.0
ID = 1.0mA
ID = 1.0A
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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May 19, 2015
IRLH5030PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
25
ID = 50A
20
T J = 125°C
15
1000
EAS , Single Pulse Avalanche Energy (mJ)
900
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
5.5A
12A
BOTTOM 50A
10
T J = 25°C
5
0
2
4
6
8
10 12 14 16 18 20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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2015 International Rectifier
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May 19, 2015
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