IRGPS66160DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 160A, T
C
=100°C
t
SC
5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 120A
G
E
C
n-channel
Applications
Welding
H Bridge Converters
G
Gate
C
Collector
IRGPS66160DPbF
Super 247
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive V
CE (ON)
Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
IRGPS66160DPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Package Type
Super 247
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRGPS66160DPbF
Max.
600
240
160
360
480
80
480
±20
750
375
-40 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
© 2014 International Rectifier
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
1.37
–––
40
Units
°C/W
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November 13, 2014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.54
Max.
—
—
IRGPS66160DPbF
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 4.0mA (25°C-175°C)
—
1.65
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
1.95
—
2.0
Gate Threshold Voltage
4.0
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-16
V
GE(th)
/T
J
gfe
Forward Transconductance
—
86
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
2000
—
—
I
GES
Gate-to-Emitter Leakage Current
—
1.80
Diode Forward Voltage Drop
V
F
—
1.30
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, Rg = 4.7L=66µH.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
1.95
I
C
= 120A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 120A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 120A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 5.6mA
—
mV/°C V
CE
= V
GE
, I
C
= 5.6mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 120A, PW = 20µs
150
V
GE
= 0V, V
CE
= 600V
µA
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±400
nA V
GE
= ±20V
2.60
I
F
= 24A
V
—
I
F
= 24A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 120A
V
GE
= 15V
V
CC
= 400V
Conditions
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
220
60
90
4470
3430
7900
80
75
190
40
5360
4390
9750
80
130
260
90
7660
470
250
µJ
I
C
= 120A, V
CC
= 400V, V
GE
=15V
R
G
= 4.7, L= 66µH, T
J
= 25°C
ns
Energy losses include tail & diode
reverse recovery
µJ
I
C
= 120A, V
CC
= 400V, V
GE
=15V
R
G
= 4.7, L= 66µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 480A
V
CC
= 480V, Vp
≤
600V
V
GE
= +20V to 0V
ns
pF
FULL SQUARE
5
—
—
—
—
420
95
34
—
—
—
—
T
J
= 150°C,V
CC
= 400V, Vp
≤
600V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 24A, V
GE
= 15V
Rg = 4.7L=200µH, Ls=150nH
2
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© 2014 International Rectifier
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November 13, 2014
250
IRGPS66160DPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 375W
Square Wave:
V
CC
200
Load Current ( A )
150
100
I
50
Diode as specified
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
250
800
700
200
600
500
Ptot (W)
25
50
75
100
TC (°C)
125
150
175
150
IC (A)
400
300
200
100
100
50
0
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
10µsec
100
100µsec
IC (A)
100
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
November 13, 2014
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480
400
320
ICE (A)
IRGPS66160DPbF
480
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
400
320
240
160
80
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
240
160
80
0
0
2
4
6
V CE (V)
8
10
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
480
400
320
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
480
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
400
320
-40°C
25°C
175°C
240
160
80
0
0
2
4
6
V CE (V)
8
10
IF (A)
240
160
80
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
V F (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
8
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
8
6
VCE (V)
4
ICE = 240A
VCE (V)
ICE = 60A
ICE = 120A
6
ICE = 60A
ICE = 120A
ICE = 240A
4
2
2
0
5
10
V GE (V)
15
20
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
November 13, 2014
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8
ICE = 60A
ICE = 120A
ICE = 240A
320
VCE (V)
ICE (A)
IRGPS66160DPbF
480
400
TJ = 25°C
TJ = 175°C
6
4
240
160
2
80
0
5
10
V GE (V)
15
20
0
2
4
6
8
10
12
14
16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
30000
25000
20000
Energy (J)
Swiching Time (ns)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
tR
100
tF
tdON
15000
10000
5000
0
0
50
100
EON
EOFF
10
150
200
250
0
50
100
150
200
250
IC (A)
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; ; V
CE
= 400V, R
G
= 4.7
;
V
GE
= 15V
30000
25000
20000
Energy (J)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; V
CE
= 400V, R
G
= 4.7; V
GE
= 15V
10000
Swiching Time (ns)
EOFF
1000
tdOFF
tdON
tR
15000
10000
5000
0
0
20
40
60
EON
100
tF
10
80
100
0
20
40
60
80
100
Rg (
)
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
5
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Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 120A; V
GE
= 15V
November 13, 2014
© 2014 International Rectifier
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