PD - 96247
IRF7410GPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Halogen-Free
V
DSS
-12V
R
DS(on)
max
7mΩ@V
GS
= -4.5V
9mΩ@V
GS
= -2.5V
13mΩ@V
GS
= -1.8V
I
D
-
16A
-
13.6A
-
11.5A
Description
These P-Channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-16
-13
-65
2.5
1.6
20
±8
-55 to +150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
07/10/09
IRF7410GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min.
-12
–––
–––
–––
–––
-0.4
–––
55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.006
–––
–––
–––
–––
-3.09
–––
–––
–––
–––
–––
91
18
25
13
12
271
200
8676
2344
1604
20
18
407
300
–––
–––
–––
pF
ns
–––
nC
–––
–––
7
9
13
-0.9
–––
–––
-1.0
-25
-100
100
µA
nA
V
mΩ
V
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -4.5V, I
D
= -16A
V
GS
= -2.5V, I
D
V
GS
= -1.8V, I
D
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= -1mA
d
= -13.6A
d
= -11.5A
d
V
DS
= V
GS
, I
D
= -250µA
mV/°C
S
V
DS
= -10V, I
D
= -16A
V
DS
= -9.6V, V
GS
= 0V
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
V
GS
= -8V
V
GS
= 8V
I
D
= -16A
V
DS
=-9.6V
V
GS
= -4.5V
I
D
=-1.0A
R
D
= 6Ω
R
G
= 6Ω
V
GS
= 0V
V
DD
= -6V V
GS
= -4.5V
d
d
V
DS
= -10V
ƒ = 1.0 MHz
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
97
134
-2.5
A
-65
-1.2
145
201
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C
I
F
= -2.5A
di/dt = -100A/µs
d
d
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board, t
≤
10sec.
2
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IRF7410GPbF
100
TOP
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
100
TOP
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
-1.0V
-1.0V
1
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -16A
ID, Drain-to-Source Current (A)
10
T J = 25°C
1.5
1
TJ = 150°C
1.0
0.1
VDS = -10V
≤60µs
PULSE WIDTH
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.5
0.0
-60 -40 -20
V
GS
= -4.5V
0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7410GPbF
14000
12000
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6
I
D
=
-16A
V
DS
=-9.6V
5
C, Capacitance(pF)
10000
8000
6000
4000
2000
0
1
Ciss
Coss = Cds + Cgd
4
3
Coss
Crss
2
1
0
10
100
0
20
40
60
80
100
120
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
100
100us
T
J
= 25
°
C
1
1ms
10
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7410GPbF
16
V
DS
V
GS
R
D
-I
D
, Drain Current (A)
12
8
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
Thermal Response(Z
thJA
)
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
R
G
D.U.T.
V
DD
5
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