StrongIRFET™
IRFH8307TRPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Qg
(typical)
Rg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
30
1.3
50
1.3
100
V
m
nC
A
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
Features
Low R
DSon
(<1.3m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8307PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8307TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C (Bottom)
= 25°C
I
D
@ T
C (Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C (Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
42
33
Units
V
100
100
400
3.6
156
0.029
-55 to + 150
A
W
W/°C
°C
Notes
through
are on page 9
1
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May 19, 2015
IRFH8307TRPbF
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
34
68
Typ.
–––
0.02
1.1
1.7
1.80
-6.2
–––
–––
–––
–––
–––
120
50
12
6.5
16
16
23
30
1.3
26
30
31
13
7200
1360
590
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
–––
V/°C Reference to 25°C, I
D
= 1mA
1.3
V
GS
= 10V, I
D
= 50A
m
2.1
V
GS
= 4.5V, I
D
= 50A
2.35
V
V
DS
= V
GS
, I
D
= 150µA
––– mV/°C
5.0
V
DS
= 24V, V
GS
= 0V
µA
150
V
DS
= 24V, V
GS
= 0V, T
J
=125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S
V
DS
= 15V, I
D
= 50A
–––
nC V
GS
= 10V, V
DS
= 15V, I
D
= 50A
75
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
nC
nC
ns
pF
V
DS
= 15V
V
GS
= 4.5V
I
D
= 50A
See Fig. 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8
See Fig.17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Units
mJ
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 200A/µs
D
G
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Q
rr
Thermal Resistance
Parameter
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
2
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
© 2015 International Rectifier
Max.
420
50
Max.
100
A
400
1.0
51
100
V
ns
nC
Units
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
33
Units
°C/W
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May 19, 2015
1000
TOP
IRFH8307TRPbF
1000
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.7V
60µs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
2.7V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.0
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS , Drain-to-Source Voltage (V)
ID = 50A
ID, Drain-to-Source Current (A)
100
VGS = 10V
1.5
TJ = 150°C
10
1
TJ = 25°C
1.0
0.1
VDS = 15V
60µs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 50A
VDS = 24V
VDS = 15V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
100
0
40
80
120
160
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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VDS , Drain-to-Source Voltage (V)
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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May 19, 2015
QG Total Gate Charge (nC)
1000
IRFH8307TRPbF
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R (on)
DS
ISD , Reverse Drain Current (A)
100
TJ = 150°C
1msec
100
100µsec
10
TJ = 25°C
1
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
300
LIMITED BY PACKAGE
250
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
2.5
ID = 1.0A
ID = 1.0mA
ID = 500µA
ID = 150µA
200
150
100
50
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
2.0
1.5
1.0
0.5
-75
-50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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May 19, 2015
m
RDS (on), Drain-to -Source On Resistance (
)
6
2000
IRFH8307TRPbF
ID = 50A
5
EAS, Single Pulse Avalanche Energy (mJ)
1600
ID
TOP
15A
21A
BOTTOM
50A
4
1200
3
800
2
TJ = 125°C
1
400
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14.
Typical Avalanche Current vs. Pulse width
5
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May 19, 2015
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