StrongIRFET™
IRFB7446PbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
40V
2.6m
3.3m
123A
120A
G
S
I
D (Package Limited)
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free*
G
Gate
S
D
G
TO-220AB
IRFB7446PbF
D
Drain
S
Source
Base part number
IRFB7446PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFB7446PbF
RDS(on), Drain-to -Source On Resistance (m
)
8
ID = 70A
6
T J = 125°C
4
125
100
ID, Drain Current (A)
18
20
75
50
2
T J = 25°C
0
2
4
6
8
10
12
14
16
25
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Rating
IRFB7446PbF
Units
A
W
W/°C
V
°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
123
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
87
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
120
Pulsed Drain Current
492
Maximum Power Dissipation
99
Linear Derating Factor
0.66
V
GS
Gate-to-Source Voltage
± 20
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
111
E
AS
Single Pulse Avalanche Energy
236
E
AS (L=1mH)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
R
JC
–––
1.52
Case-to-Sink, Flat Greased Surface
R
CS
0.50
–––
Junction-to-Ambient
R
JA
–––
62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
mJ
A
mJ
Units
°C/W
Min. Typ. Max.
40
––– –––
––– 0.033 –––
–––
2.6
3.3
–––
3.9
–––
2.2
3.0
3.9
––– –––
1.0
––– ––– 150
––– ––– 100
––– ––– -100
–––
1.6
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 70A
m
V
GS
= 6.0V, I
D
= 35A
V
V
DS
= V
GS
, I
D
= 100µA
V
DS
=40 V, V
GS
= 0V
µA
V
DS
=40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.046mH,R
G
= 50, I
AS
= 70A, V
GS
=10V.
I
SD
70A, di/dt
1174A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while VDS is rising from 0 to 80% V
DSS
.
C
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population, starting T
J
= 25°C, L= 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.
*
Halogen -Free since April 30, 2014
2
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November 7, 2014
IRFB7446PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
269
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
62
16
20
42
11
34
33
23
3183
475
331
596
688
Typ.
–––
–––
0.9
7.6
22
24
15
15
1.0
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
=70A
93
I
D
= 70A
–––
V
DS
= 20V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 20V
–––
I
D
= 30A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
120
A
492
1.3
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, VDS = 0V to 32V
V
GS
= 0V, VDS = 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 70A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
= 70A,V
DS
= 40V
T
J
= 25°C
V
DD
= 34V
ns
T
J
= 125°C
I
F
= 70A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
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November 7, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFB7446PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
1
4.5V
60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs
PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.2
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175°C
ID = 70A
VGS = 10V
1.8
10
T J = 25°C
1
VDS = 10V
60µs
PULSE WIDTH
0.1
2
4
6
8
10
1.4
1.0
0.6
-60
-20
20
60
100
140
180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 70A
VDS = 32V
VDS = 20V
10000
Ciss
Coss
Crss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
November 7, 2014
1000
IRFB7446PbF
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100µsec
100
1msec
Package Limited
DC
10
T J = 25°C
10
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.6
50
49
48
47
46
45
44
43
42
41
40
-60
-20
20
60
100
140
180
T J , Temperature ( °C )
Id = 5.0mA
VDS = 0V to 32V
0.5
0.4
Energy (µJ)
0.3
0.2
0.1
0.0
0
5
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
20.0
VGS =
VGS =
VGS =
VGS =
VGS =
5.5V
6.0V
7.0V
8.0V
10V
15.0
10.0
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
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November 7, 2014
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