StrongIRFET
IRFH7440PbF
HEXFET
®
Power MOSFET
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
PWM Inverterized topologies
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Electronic ballast applications
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
RoHS Compliant containing no Lead, no Bromide,
and no Halogen
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.8mΩ
2.4mΩ
159A
85A
c
PQFN 5X6 mm
Base Part Number
IRFH7440PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable Part Number
IRFH7440TRPBF
IRFH7440TR2PBF
Note
EOL notice #259
RDS(on), Drain-to -Source On Resistance (m
Ω)
6.0
ID = 50A
5.0
200
4.0
T J = 125°C
3.0
ID, Drain Current (A)
150
Limited By Package
100
2.0
TJ = 25°C
1.0
4
6
8
10
12
14
16
18
20
50
0
25
50
75
100
125
150
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
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© 2015 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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July 7, 2015
IRFH7440PbF
Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
101
159
85
624
104
0.83
± 20
3.0
-55 to + 150
Max.
Units
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
W
W/°C
V
V/ns
°C
f
Storage Temperature Range
T
STG
Avalanche Characteristics
Single Pulse Avalanche Energy
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
e
Single Pulse Avalanche Energy
l
Avalanche Current
Ãd
Repetitive Avalanche Energy
d
Parameter
121
232
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
k
Junction-to-Case
k
Junction-to-Case
Typ.
Max.
Units
–––
–––
–––
–––
1.2
31
35
22
°C/W
Junction-to-Ambient
j
Junction-to-Ambient
j
Parameter
Min.
Typ.
Max.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Units
Conditions
V
(BR)DSS
Δ
V
(BR)DSS
/
Δ
T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
0.031
1.8
2.7
–––
–––
–––
–––
–––
2.6
–––
–––
2.4
–––
3.9
1.0
150
100
-100
–––
V
V/°C
m
Ω
m
Ω
V
μA
nA
Ω
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 50A
V
GS
= 6.0V, I
D
g
= 25A
g
d
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Current is limited to 85A by source bond technology.
Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.097mH
R
G
= 50Ω, I
AS
= 50A, V
GS
=10V.
I
SD
≤
50A, di/dt
≤
1126A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
FR-4 material.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50Ω, I
AS
= 22A,
V
GS
=10V.
2
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© 2015 International Rectifier
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July 7, 2015
IRFH7440PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Symbol
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
149
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
92
22
29
63
12
45
53
42
4574
700
466
863
1229
Typ.
–––
138
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
S
nC
V
DS
= 10V, I
D
= 50A
I
D
= 50A
V
DS
=20V
V
GS
= 10V
g
ns
V
DD
= 20V
I
D
= 30A
R
G
= 2.7
Ω
V
GS
= 10V
g
i
= 0V to 32V
h
D
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
25
27
16
17
1.2
85
Units
Conditions
A
A
V
ns
nC
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
Ãd
745
1.3
–––
–––
–––
–––
–––
S
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
I
F
= 50A
di/dt = 100A/μs
g
g
3
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© 2015 International Rectifier
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July 7, 2015
IRFH7440PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
10
100
0.1
1
≤
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50A
VGS = 10V
100
T J = 150°C
10
T J = 25°C
VDS = 10V
≤
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 50A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
July 7, 2015
IRFH7440PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
100
1msec
10
Limited by
package
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
DC
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
10
100
VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
50
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
0.7
0.6
48
0.5
Energy (μJ)
46
0.4
0.3
0.2
44
42
0.1
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
40
T J , Temperature ( °C )
-5
0
5
10
15
20
25
30
35
40
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.0V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
40
30
20
10
0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
Submit Datasheet Feedback
July 7, 2015
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