APPROVED (NOT RELEASED)
IRF9394MPbF
DirectFET™ dual P-Channel Power MOSFET
Typical values (unless otherwise specified)
Applications
Isolation Switch for Input Power or Battery Application
Features and Benefits
Environmentally
Friendly Product
ROHS
compliant, Halogen-Free
Dual
Common-Drain P-Channel MOSFETs Provides High
Level of Integration and Very Low RDS(on)
V
DSS
Q
g tot
32nC
V
GS
Q
gd
15nC
G
S
D
S
S
S
G
R
DS(on)
Q
gs2
3.2nC
R
DS(on)
Q
oss
23nC
-30V max ±20V max 5.3m@-10V 8.5m@-4.5V
Q
rr
62nC
D
V
gs(th)
-1.8V
MC
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9394MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced
DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only
0.54 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to
maximize thermal transfer in power systems, improving previous best thermal resistance by 80%
Orderable Part Number
IRF9394MTRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Note
“TR” suffix
Max.
-30
±20
-14
-11
-75
-110
VDS = -24V
VDS = -15V
VDS= -6V
Absolute Maximum Ratings
Symbol
Parameter
Drain-to-Source Voltage
V
DS
Gate-to-Source Voltage
V
GS
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
-V GS, Gate-to-Source Voltage (V)
24
Typical RDS(on) (m)
Units
V
A
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
ID = -11A
20
16
12
8
4
0
2
4
6
8
10
12
14
T J = 125°C
ID = -14A
T J = 25°C
16
18
20
-VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On– Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
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Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
V
GS(th
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
OSS
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre -Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRF9394MPbF
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= -250µA
0.012 ––– V/°C Reference to 25°C, I
D
= -1.0mA
5.3
6.5
V
GS
= -10V, I
D
= -14A
m
8.5 10.2
V
GS
= -4.5V, I
D
= -11A
-1.8 -2.4
V V
DS
= V
GS
, I
D
= -50µA
-6.1 –––
–––
–––
–––
–––
–––
64
32
6.5
3.2
15
7.3
18.2
23
15
16
142
76
121
3241
820
466
-1.0
-150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
nC
V
DD
= -15V
I
D
= -11A
R
G
= 1.8
V
GS
= -4.5V
V
GS
= 0V
pF
V
DS
= -15V
ƒ = 1KHz
V
DS
=-16V, V
GS
= 0V
nC
V
DS
=-15V
V
GS
= -4.5V
I
D
= -11A
µA
nA
S
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
V
DS
= -15V, I
D
= -11A
V
DS
= -15V,V
GS
= -10V, I
D
= -11A
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
43
62
-57
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
=-11A, V
GS
= 0V
T
J
= 25° C ,V
R
= -15V, I
F
= -11A
di/dt =260A/µs
Min. Typ. Max. Units
A
-110
-1.2
65
93
V
ns
nC
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400µs; duty cycle
2%.
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July 9, 2014
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IRF9394MPbF
Max.
2.1
1.3
57
0.02
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
2.2
–––
Units
W
W/°C
°C
Units
Absolute Maximum Ratings
Symbol
Parameter
P
D
@T
A
= 25°C Maximum Power Dissipation
P
D
@T
A
= 70°C Maximum Power Dissipation
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Dearating Factor
T
JP
Peak Soldering Temperature
T
J
Operating Junction and
Storage Temperature Range
T
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
R
JA-PCB
Junction-to-PCB Mounted
100
10
Thermal Response ( Z thJA )
°C/W
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized
back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
3
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IRF9394MPbF
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
1000
TOP
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.0V
-2.8V
-2.6V
-I D, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
-2.6V
1
1
-2.6V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 150°C
10
100
0.1
1
-VDS , Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1.5
1000
VDS = -15V
60µs
PULSE WIDTH
100
Fig 5.
Typical Output Characteristics
ID = -14A
Typical RDS(on) (Normalized)
V GS = -10V
V GS = -4.5V
-I D, Drain-to-Source Current (A)
10
1.0
1
T J = 150°C
T J = 25°C
T J = -40°C
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
38
100000
Coss = Cds + Cgd
Typical RDS(on) ( m)
VGS = 0V,
f = 1 KHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
34
30
26
22
18
14
10
6
2
Vgs = -4.5V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
T J = 25°C
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
-VDS , Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
-ID , Drain Current (A)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 9.
Typical On– Resistance vs. Drain Current
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1000
T J = 150°C
100
T J = 25°C
T J = -40°C
IRF9394MPbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µs
1ms
10
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.2
0.4
0.6
0.8
1.0
1.2
10
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
1
VGS = 0V
0.1
-VSD , Source-to-Drain Voltage (V)
DC
0.01
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
80
Fig 11.
Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
-I D, Drain Current (A)
60
2.5
40
2.0
1.5
20
ID = 50µA
ID = 250µA
ID = 1.0A
1.0
ID = 1.0mA
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
Fig 13.
Threshold Voltage vs. Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
25
50
75
ID
TOP
-1.2A
-1.9A
BOTTOM -11A
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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