PD - 97035D
IRFB4227PbF
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l
Low Q
G
for Fast Response
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High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
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Repetitive Avalanche Capability for Robustness
and Reliability
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Class-D Audio Amplifier 300W-500W
(Half-bridge)
Key Parameters
V
DS
max
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
D
200
240
19.7
130
175
D
V
V
m
:
A
°C
G
S
G
D
S
TO-220AB
D
S
G
Description
This
HEXFET
®
Power MOSFET
is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This
MOSFET
utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this
MOSFET
are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this
MOSFET
a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
Units
V
A
c
Repetitive Peak Current
g
W
W/°C
°C
x
x
N
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
f
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Notes
through
are on page 8
www.irf.com
1
09/10/07
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
IRFB4227PbF
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
49
–––
–––
–––
–––
–––
–––
100
–––
–––
Typ. Max. Units
–––
170
19.7
–––
-13
–––
–––
–––
–––
–––
70
23
33
20
21
31
–––
570
910
4600
460
91
360
4.5
7.5
–––
–––
24
5.0
–––
20
1.0
100
-100
–––
98
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
µJ
ns
V
DD
= 100V
I
D
= 46A
R
G
= 2.5Ω
V
GS
= 10V
S
nC
V
mΩ
V
mV/°C
µA
mA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 46A
mV/°C Reference to 25°C, I
D
= 1mA
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 46A
V
DD
= 100V, I
D
= 46A, V
GS
= 10V
e
V
DD
= 160V, V
GS
= 15V, R
G
= 4.7Ω
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 25°C
L = 220nH, C= 0.4µF, V
GS
= 15V
V
DS
= 160V, R
G
= 4.7Ω, T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,
V
GS
= 0V, V
DS
= 0V to 160V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
D
e
C
iss
C
oss
C
rss
C
oss
eff.
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
E
AS
E
AR
V
DS(Avalanche)
I
AS
d
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Ã
Avalanche Current
Ãd
Single Pulse Avalanche Energy
Parameter
Typ.
Max.
Units
mJ
mJ
V
A
–––
–––
240
–––
140
33
–––
39
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
(Body Diode)
I
SM
V
SD
t
rr
Q
rr
Pulsed Source Current
(Body Diode)
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
100
430
65
A
260
1.3
150
640
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 46A, V
GS
= 0V
di/dt = 100A/µs
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
e
T
J
= 25°C, I
F
= 46A, V
DD
= 50V
2
e
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IRFB4227PbF
1000
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
100
7.0V
10
10
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
1
0.1
≤
60µs PULSE WIDTH
Tj = 175°C
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
4.0
ID, Drain-to-Source Current
(Α)
VDS = 25V
≤
60µs PULSE WIDTH
100.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 46A
3.0
VGS = 10V
10.0
TJ = 175°C
2.0
1.0
TJ = 25°C
1.0
0.1
3.0
4.0
5.0
6.0
7.0
8.0
0.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
1000
1000
900
800
Energy per pulse (µJ)
700
600
500
400
300
200
100
110
120
130
140
150
160
170
Energy per pulse (µJ)
L = 220nH
C = 0.4µF
100°C
25°C
800
L = 220nH
C = Variable
100°C
25°C
600
400
200
0
130
140
150
160
170
180
190
VDS, Drain-to -Source Voltage (V)
ID, Peak Drain Current (A)
Fig 5.
Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 6.
Typical E
PULSE
vs. Drain Current
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3
IRFB4227PbF
1400
L = 220nH
1200
1000.0
Energy per pulse (µJ)
1000
800
600
400
200
0
25
C= 0.4µF
C= 0.3µF
C= 0.2µF
ISD, Reverse Drain Current (A)
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
VGS = 0V
50
75
100
125
150
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Temperature (°C)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical E
PULSE
vs.Temperature
8000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 8.
Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 46A
VDS = 160V
VDS = 100V
VDS = 40V
16
6000
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss
4
Crss
0
1
10
100
1000
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 10.
Typical Gate Charge vs.Gate-to-Source Voltage
1000
70
60
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1µsec
ID , Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
175
100
10µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
TC , CaseTemperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 11.
Maximum Drain Current vs. Case Temperature
Fig 12.
Maximum Safe Operating Area
4
www.irf.com
IRFB4227PbF
(
RDS (on), Drain-to -Source On Resistance
Ω
)
EAS, Single Pulse Avalanche Energy (mJ)
0.16
600
ID = 46A
0.12
500
I D
TOP
8.6A
14A
BOTTOM
39A
400
0.08
300
TJ = 125°C
0.04
200
100
TJ = 25°C
0.00
5
6
7
8
9
10
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 13.
On-Resistance Vs. Gate Voltage
5.0
Fig 14.
Maximum Avalanche Energy Vs. Temperature
200
VGS(th) Gate threshold Voltage (V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25
0
25
50
75
100 125 150 175
0
25
50
75
100
ID = 250µA
Repetitive Peak Current (A)
160
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
120
80
40
125
150
175
TJ , Temperature ( °C )
Case Temperature (°C)
Fig 15.
Threshold Voltage vs. Temperature
1
Fig 16.
Typical Repetitive peak Current vs.
Case temperature
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.08698 0.000074
0.2112
0.1506
0.001316
0.009395
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
1
τ
2
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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