技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-50R07W1H3_B11A
EasyPACK模块带有pressfit压接管脚和温度检测NTC
EasyPACKmoduleandPressFIT/NTC
J
V
CES
= 650V
I
C nom
= 25A / I
CRM
= 50A
典型应用
•
½½应用
•
高频开关应用
•
zh
•
辅助逆变器
•
混合动力½½
•
感应加热和电焊机
电气特性
•
增加阻断电压至650V
•
高速IGBTH3
•
½电感设计
•
½开关损耗
•
½V
CEsat
机械特性
•
2.5kV交流1分钟绝缘
•
高爬电距离和电气间隙
•
PressFIT压接技术
•
符合RoHS
•
集成的安装夹½安装坚固
TypicalApplications
• AutomotiveApplications
• HighFrequencySwitchingApplication
• DC/DCconverter
• AuxiliaryInverters
• HybridElectricalVehicles(H)EV
• InductiveHeatingandWelding
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• HighSpeedIGBTH3
• Lowinductivedesign
• LowSwitchingLosses
• LowV
CEsat
MechanicalFeatures
• 2.5kVAC1minInsulation
• HighCreepageandClearanceDistances
• PressFITContactTechnology
• RoHScompliant
•
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2014-03-05
revision:3.0
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:AS
approvedby:TR
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-50R07W1H3_B11A
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压
Collector-emittervoltage
集电极电流
Implementedcollectorcurrent
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
V
CES
I
CN
T
C
= 130°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 175°C
650
50
25
55
100
200
+/-20
min.
I
C
= 25 A, V
GE
= 15 V
I
C
= 25 A, V
GE
= 15 V
I
C
= 25 A, V
GE
= 15 V
I
C
= 0,80 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 650 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 25 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 6,8
Ω
I
C
= 25 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 6,8
Ω
I
C
= 25 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 6,8
Ω
I
C
= 25 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 6,8
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
0,02
0,02
0,02
0,01
0,011
0,012
0,15
0,18
0,19
0,007
0,011
0,013
0,21
0,32
0,35
0,22
0,35
0,38
280
0,60
4,9
typ.
1,50
1,55
1,60
5,8
0,50
0,0
3,25
0,09
0,05
400
max.
1,85
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
0,75 K/W
V
A
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
6,5
t
r
t
d off
t
f
I
C
= 25 A, V
CE
= 300 V, L
S
= 25 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 2300 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 6,8
Ω
T
vj
= 150°C
I
C
= 25 A, V
CE
= 300 V, L
S
= 25 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 4800 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 6,8
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
t
P
≤
4 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJC
preparedby:AS
approvedby:TR
dateofpublication:2014-03-05
revision:3.0
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-50R07W1H3_B11A
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
T
vj op
-40
0,75
150
K/W
°C
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
V
RRM
I
F
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
I
FRM
I²t
min.
I
F
= 25 A, V
GE
= 0 V
I
F
= 25 A, V
GE
= 0 V
I
F
= 25 A, V
GE
= 0 V
I
F
= 25 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
I
F
= 25 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
I
F
= 25 A, - di
F
/dt = 2300 A/µs (T
vj
=150°C)
V
R
= 300 V
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
650
25
50
50,0
typ.
1,65
1,60
1,55
35,0
40,0
41,0
0,96
1,60
1,75
0,21
0,35
0,39
1,25
0,95
-40
150
max.
2,15
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
1,45 K/W
K/W
°C
V
A
A
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
RM
Q
r
E
rec
R
thJC
R
thCH
T
vj op
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
3375
3411
3433
-5
typ.
5,00
5
20,0
max.
kΩ
%
mW
K
K
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:AS
approvedby:TR
dateofpublication:2014-03-05
revision:3.0
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-50R07W1H3_B11A
模块/Module
绝缘测试电压
Isolationtestvoltage
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
重量
Weight
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
VGE muss im Kurzschluss auf 15V begrenzt werden (z.B. Klemmschaltung).
VGE has to be limited to 15V during shortcircuit (e.g. clamping).
T
C
=25°C,每个开关/perswitch
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
CTI
V
ISOL
min.
L
sCE
R
CC'+EE'
T
stg
F
G
-40
20
-
24
2,5
impr.Al
2
O
3
11,5
6,3
10,0
5,0
> 200
typ.
15
5,50
125
50
max.
nH
mΩ
°C
N
g
kV
mm
mm
preparedby:AS
approvedby:TR
dateofpublication:2014-03-05
revision:3.0
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F4-50R07W1H3_B11A
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
T
vj
=150°C
100
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
V
GE
=15V
50
45
40
35
30
I
C
[A]
25
20
15
10
5
0
T
vj
= -40°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
90
80
70
60
I
C
[A]
50
40
30
20
10
0
V
GE
= 9V
V
GE
= 11V
V
GE
= 13V
V
GE
= 15V
V
GE
= 17V
0,0
0,5
1,0
V
CE
[V]
1,5
2,0
2,5
0,0
0,5
1,0
1,5
2,0
2,5 3,0
V
CE
[V]
3,5
4,0
4,5
5,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
I
C
=f(V
GE
)
V
CE
=20V
100
90
80
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
E
on
=f(I
C
),E
off
=f(I
C
)
V
GE
=±15V,R
Gon
=6.8Ω,R
Goff
=6.8Ω,V
CE
=300V
0,8
0,7
0,6
E
on
, T
vj
= 25°C
E
on
, T
vj
= 150°C
E
off
, T
vj
= 25°C
E
off
, T
vj
= 150°C
70
60
50
40
30
0,2
20
10
0
0,1
0,0
E [mJ]
5
6
7
8
9
V
GE
[V]
10
11
12
I
C
[A]
0,5
0,4
0,3
0
5
10
15
20
25 30
I
C
[A]
35
40
45
50
preparedby:AS
approvedby:TR
dateofpublication:2014-03-05
revision:3.0
5
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