IRGP4740DPbF
IRGP4740D-EPbF
V
CES
= 650V
I
C
= 40A, T
C
=100°C
t
SC
≥
5.5µs, T
J(max)
= 175°C
G
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
V
CE(ON)
typ. = 1.7V @ I
C
= 24A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
C
E
G
C
E
n-channel
G
Gate
IRGP4740DPbF
TO-247AC
C
Collector
IRGP4740D-EPbF
TO-247AD
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
Lead-Free, RoHs compliant
Base part number
IRGP4740DPbF
IRGP4740D-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4740DPbF
IRGP4740D-EPbF
Max.
650
60
40
72
96
45
27
96
±20
250
125
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.6
1.6
–––
40
Units
V
A
V
W
C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Units
°C/W
1
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November 13, 2014
IRGP4740DPbF/IRGP4740D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
V
CE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Min.
650
—
Typ.
—
0.86
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 2mA (25°C-175°C)
—
1.7
—
2.1
Gate Threshold Voltage
5.5
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-20
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
16
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
530
Gate-to-Emitter Leakage Current
—
—
I
GES
—
1.6
Diode Forward Voltage Drop
V
F
—
1.26
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
.
2.0
V
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
—
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
7.4
V
V
CE
= V
GE
, I
C
= 700µA
—
mV/°C V
CE
= V
GE
, I
C
= 700µA (25°C-150°C)
—
S
V
CE
= 50V, I
C
= 24A, PW = 20µs
35
µA V
GE
= 0V, V
CE
= 650V
—
V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
±100
nA V
GE
= ±20V
2.4
V
I
F
= 24A
—
I
F
= 24A, T
J
= 175°C
Max Units
Conditions
70
I
C
= 24A
nC V
GE
= 15V
23
V
CC
= 400V
30
740
350
µJ I
C
= 24A, V
CC
= 400V, V
GE
=15V
1090
R
G
= 10Ω, L = 0.40µH, T
J
= 25°C
40
Energy losses include tail & diode
45
ns reverse recovery
90
40
—
—
—
—
—
—
—
—
—
—
µJ
I
C
= 24A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 0.40µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 96A
V
CC
= 520V, Vp
≤
650V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
650V
V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A
V
GE
= 15V, Rg = 10Ω
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
47
15
20
520
240
760
24
27
73
23
1120
475
1595
22
28
88
74
1550
124
43
ns
pF
FULL SQUARE
5.5
—
—
—
—
292
170
17
—
—
—
—
µs
µJ
ns
A
2
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November 13, 2014
IRGP4740DPbF/IRGP4740D-EPbF
60
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 108.7W
Square Wave:
V
CC
50
Load Current ( A )
40
30
I
20
Diode as specified
10
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
60
50
40
30
20
10
0
25
50
75
100
TC (°C)
125
150
175
50
Ptot (W)
250
200
150
IC (A)
100
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
100
100
10µsec
IC (A)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
1msec
DC
IC (A)
10
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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November 13, 2014
IRGP4740DPbF/IRGP4740D-EPbF
100
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
80
ICE (A)
60
40
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
10
V
GE = 18V
60
40
20
20
0
0
2
4
6
V CE (V)
8
0
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
100
VGE = 18V
80
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
100
80
ICE (A)
60
60
40
40
-40°C
25°C
175°C
20
20
0
0
2
4
6
V CE (V)
8
10
0
0
1
V F (V)
2
3
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
12
10
8
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
12
10
ICE = 12A
ICE = 24A
8
V CE (V)
ICE = 12A
ICE = 24A
ICE = 48A
ICE = 48A
6
4
2
0
5
10
V GE (V)
15
20
6
4
2
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
November 13, 2014
IRGP4740DPbF/IRGP4740D-EPbF
12
10
8
V CE (V)
100
ICE = 12A
ICE = 24A
80
6
4
2
0
5
10
V GE (V)
15
20
ICE (A)
ICE = 48A
60
40
TJ = 25°C
TJ = 175°C
20
0
4
6
8
10
12
14
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
3000
2500
2000
Energy (µJ)
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
Swiching Time (ns)
100
tF
tdON
10
tR
1500
1000
500
0
0
10
EON
EOFF
1
20
IC (A)
30
40
50
0
10
20
IC (A)
30
40
50
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 0.40mH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
2400
2000
1600
Energy (µJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 0.40mH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
Swiching Time (ns)
EON
tdOFF
100
tF
tR
tdON
1200
EOFF
800
400
0
0
20
40
60
80
100
10
0
20
40
60
80
100
Rg (
Ω
)
RG (
Ω
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 0.40mH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 0.40mH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
Submit Datasheet Feedback
November 13, 2014
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