IRFB4115PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
D
150V
9.3mΩ
11mΩ
104A
Benefits
l
Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead Free
l
RoHS Compliant, Halogen-Free
G
G
D
S
TO-220AB
D
S
Gate
Base Part Number
IRFB4115PbF
Package Type
TO-220
Standard Pack
Form
Tube
Quantity
50
Drain
Source
Orderable Part Number
IRFB4115PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
104
74
420
380
2.5
± 20
18
-55 to + 175
300
10lb in (1.1N m)
830
Units
A
W
W/°C
V
V/ns
c
e
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
d
Typ.
–––
0.50
–––
mJ
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Max.
0.40
–––
62
Units
°C/W
ij
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
IRFB4115PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.18
9.3
–––
–––
–––
–––
–––
2.3
–––
–––
11
5.0
20
250
100
-100
–––
V
V/°C
mΩ
V
µA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 3.5mA
V
GS
= 10V, I
D
= 62A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Min. Typ. Max. Units
–––
77
28
26
51
18
73
41
39
5270
490
105
460
530
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
DS
= 75V
V
GS
= 10V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
V
DD
= 98V
I
D
= 62A
R
G
= 2.2Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 120V
97
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
f
f
ns
pF
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
h
g
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
104
420
A
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
T
J
= 25°C
V
R
= 130V,
I
F
= 62A
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
D
Ãd
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
86
–––
ns
––– 110 –––
––– 300 –––
nC
––– 450 –––
–––
6.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
S
f
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Recommended max EAS limit, starting T
J
= 25°C,
L = 0.17mH, R
G
= 25Ω, I
AS
= 100A, V
GS
=15V.
I
SD
≤
62A, di/dt
≤
1040A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
IRFB4115PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
5.0V
10
1
5.0V
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
3.0
ID = 62A
2.5
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
2.0
10
T J = 25°C
1.5
1
VDS = 50V
≤60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
16
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
ID= 62A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
www.irf.com
©
2014 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
November 11, 2014
IRFB4115PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100µsec
100
DC
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD, Source-to-Drain Voltage (V)
120
100
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
6.0
5.0
4.0
VGS(th) , Gate threshold Voltage (V)
Fig 10.
Drain-to-Source Breakdown Voltage
6.0
5.0
Energy (µJ)
4.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
3.0
2.0
1.0
0.0
-20
0
20
40
60
80 100 120 140 160
3.0
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 11.
Typical C
OSS
Stored Energy
4
www.irf.com
©
2014 International Rectifier
VDS, Drain-to-Source Voltage (V)
Fig 12.
Threshold Voltage vs. Temperature
Submit Datasheet Feedback
November 11, 2014
IRFB4115PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
C
τ
1
τ
2
Ri (°C/W)
τi
(sec)
0.245
0.0059149
0.155
0.0006322
0.001
SINGLE PULSE
( THERMAL RESPONSE )
C i=
τi/R
i
Ci=
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart = 25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14.
Typical Avalanche Current vs.Pulsewidth
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
November 11, 2014
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
