60A Dual Integrated Power Block
IRF3546
FEATURES
Peak efficiency up to 94% at 1.2V
Two pairs of control and synchronous
MOSFETs in a single PQFN package
Proprietary package minimizes package
parasitic and simplifies PCB layout
Input voltage (VIN) range of 4.5V to 21V
Output current capability of 30A/phase
Ultra-low Rg MOSFET technology minimizes
switching losses for optimized high frequency
performance
Synchronous MOSFET with monolithic
integrated Schottky diode reduces dead-time
and diode reverse recovery losses
Efficient dual side cooling
Small 6mm x 8 mm x 0.9mm PQFN package
Lead-free RoHS compliant package
The IRF3546 dual integrated Power Block co-
packages two pairs of high performance control and
synchronous MOSFETs and is ideal for use in high-
density two-phase synchronous buck converters. It is
optimized internally for PCB layout, heat transfer and
package inductance. Coupled with the latest
generation of IR MOSFET technology, the IRF3546
provides higher efficiency at low output voltages
required by cutting edge CPU, GPU and DDR
memory designs.
High switching frequency enables high performance
transient response, allowing miniaturization of output
inductors, as well as input and output capacitors while
maintaining industry leading efficiency. Integrating two
phases in one package while still providing superior
efficiency and thermal performance, the IRF3546
enables smallest size solutions.
The IRF3546 uses IR’s latest generation of low
voltage MOSFET technology characterized by ultra-
low gate resistance (Rg, <0.5Ω) and charge that result
in minimized switching losses. The synchronous
MOSFET optimizes conduction losses and features a
monolithic integrated Schottky to significantly reduce
dead-time and diode conduction and reverse recovery
losses.
The IRF3546 is optimized specifically for CPU core
power delivery in 12V input applications like servers,
certain notebooks, GPU and DDR memory designs.
APPLICATIONS
High frequency, low profile DC-DC converters
Voltage Regulators for CPUs, GPUs, and DDR
memory arrays
DESCRIPTION
ORDERING INFORMATION
Base Part Number
IRF3546
Package Type
PQFN 6 mm x 8 mm
Standard Pack
Form
Tape and Reel
Quantity
3000
Orderable Part Number
IRF3546MTRPBF
1
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| © 2013 International Rectifier
May 29, 2013 | Final
60A Dual Integrated Power Block
IRF3546
PIN DESCRIPTIONS
PIN #
PIN NAME
PIN DESCRIPTION
High current input supply pads. Connected to Drains of Q1. Recommended operating
range is 4.5V to 21V. Connect at least two 10uF 1206 ceramic capacitors and a 0.1uF
0402 ceramic capacitor. Place the capacitors as close as possible to VIN1 pins (40 and 41)
and PGND pins (38 and 39). The 0.1uF 0402 capacitor should be on the same side of the
PCB as the IRF3546.
No connects. These pins can be connected to the VIN planes to reduce PCB trace
resistances.
Gate connection of the Channel 1 control MOSFET Q1.
High current Power Ground. Connected to Sources of Q2 and Q4. Note all pads are
internally connected in the package. Provide low resistance connections to the ground
plane and respective output capacitors.
Gate connection of the Channel 2 control MOSFET Q3.
High current input supply pads. Connected to Drains of Q3. Recommended operating
range is 4.5V to 21V. Connect at least two 10uF 1206 ceramic capacitors and a 0.1uF
0402 ceramic capacitor. Place the capacitors as close as possible to VIN2 pins (16 and 17)
and PGND pins (19 and 20). The 0.1uF 0402 capacitor should be on the same side of the
PCB as the IRF3546.
Gate connection of the Channel 2 synchronous MOSFET Q4.
High Current Switch Node output for Channel 2. Connected to Source of Q3 and Drain of
Q4.
High Current Switch Node output for Channel 1. Connected to Source of Q1 and Drain of
Q2.
Gate connection of the Channel 1 synchronous MOSFET Q2.
1, 40, 41
VIN1
2-6, 10-14
7
8, 19, 20,
38, 39, 42
9
No Connect
GATEH1
PGND
GATEH2
15-17
VIN2
18
21-28
29-36
37
GATEL2
SW2
SW1
GATEL1
4
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| © 2013 International Rectifier
May 29, 2013 | Final
60A Dual Integrated Power Block
IRF3546
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications are not implied.
Parameter
V
DS
V
GS
I
D
@T
C
= 25°C
I
D
@T
C
= 70°C
I
DM
E
AS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulse Drain Current
Single Pulse Avalanche Energy
16
13
130
50
NOTE 1
Q1 and Q3 Max.
25
±20
Q2 and Q4 Max.
Units
V
V
20
16
160
200
NOTE 2
A
A
A
mJ
THERMAL INFORMATION
Thermal Resistance, Junction to Top (θ
JC_TOP
)
Thermal Resistance, Junction to PCB (pin 28) (θ
JB
)
Thermal Resistance (θ
JA
)
NOTE 3
11.3 °C/W
1.6 °C/W
18.4 °C/W
-40°C to 150°C
-55°C to 150°C
MSL3
260°C
Maximum Operating Junction Temperature
Maximum Storage Temperature Range
MSL Rating
Reflow Temperature
Notes
1.
2.
3.
T
J
=25°C, L =100uH, R
G
=50Ω, I
AS
=32A.
T
J
=25°C, L =100uH, R
G
=50Ω, I
AS
=63A.
Thermal Resistance (θ
JA
) is measured with the component mounted on a high effective thermal conductivity test board in free air.
Refer to International Rectifier Application Note AN-994 for details.
5
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| © 2013 International Rectifier
May 29, 2013 | Final
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