PD - 97275B
IRF7862PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
100% tested for Rg
l
Lead-Free
V
DSS
30V
3.3m
:
@V
GS
= 10V
1
2
3
4
8
7
R
DS(on)
max
Qg
30nC
S
S
S
G
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
21
17
170
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
1
06/04/09
IRF7862PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
3.0
3.7
–––
-5.4
–––
–––
–––
–––
–––
30
7.5
3.1
9.8
9.6
12.9
18
1.0
16
19
18
11
4090
810
390
–––
–––
3.3
4.5
2.35
–––
1.0
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
mΩ
V
GS
= 4.5V, I
D
= 16A
V V
DS
= V
GS
, I
D
= 100µA
e
e
mV/°C V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 16A
45
–––
–––
–––
–––
–––
–––
1.6
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 16A
See Figs. 15 & 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
ns
R
G
= 1.8Ω
See Fig. 18
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
350
16
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
17
33
3.1
A
170
1.0
26
50
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 15V
di/dt = 430A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7862PbF
1000
≤
60µs PULSE WIDTH
Tj = 25°C
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
100
10
BOTTOM
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
10
0.1
2.3V
2.3V
1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VDS = 15V
≤60µs
PULSE WIDTH
ID, Drain-to-Source Current (A)
100
1.4
ID = 21A
VGS = 10V
1.2
10
T J = 150°C
T J = 25°C
1.0
1
0.8
0.1
1
2
3
4
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7862PbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
ID= 16A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
3.0
1000
Coss
Crss
2.0
1.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10msec
T J = 150°C
10
T J = 25°C
1
T A = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
0.1
Tj = 150°C
Single Pulse
1.0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7862PbF
25
VGS(th) , Gate Threshold Voltage (V)
2.5
2.3
2.0
1.8
1.5
1.3
1.0
20
ID, Drain Current (A)
15
10
ID = 250µA
5
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA ) °C/W
10
1
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
4
τ
A
Ri (°C/W)
1.242
4.759
28.506
15.507
τi
(sec)
0.000172
0.031397
1.2211
44.5
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
τ
1
τ
2
τ
3
τ
4
Ci=
τi/Ri
Ci=
τi/Ri
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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