PD -
97363
IRLB3034PbF
Applications
l
DC Motor Drive
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Optimized for Logic Level Drive
l
Very Low R
DS(ON)
at 4.5V V
GS
l
Superior R*Q at 4.5V V
GS
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
G
HEXFET
®
Power MOSFET
D
G
S
V
DSS
40V
R
DS(on)
typ.
1.4m
:
max.
1.7m
:
I
D (Silicon Limited)
343A
I
D (Package Limited)
195A
c
TO-220AB
IRLB3034PbF
D
S
Gate
Drain
Max.
343
243
195
1372
375
2.5
±20
4.6
Source
Units
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
c
c
d
W
W/°C
V
V/ns
f
-55 to + 175
°C
300
10lbf in (1.1N m)
255
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
d
e
d
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.5
–––
Max.
0.4
–––
62
Units
°C/W
www.irf.com
1
01/14/09
IRLB3034PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
40
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
0.04
1.4
1.6
–––
–––
–––
–––
–––
2.1
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 5mA
1.7
V
GS
= 10V, I
D
= 195A
mΩ
2.0
V
GS
= 4.5V, I
D
= 172A
2.5
V V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
20
µA
250
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
100
nA
-100
V
GS
= -20V
g
g
d
–––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
286 ––– –––
––– 108 162
–––
29
–––
–––
54
–––
–––
54
–––
–––
65
–––
––– 827 –––
–––
97
–––
––– 355 –––
––– 10315 –––
––– 1980 –––
––– 935 –––
––– 2378 –––
––– 2986 –––
S
Conditions
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
iÃ
h
V
DS
= 10V, I
D
= 195A
I
D
= 185A
V
DS
= 20V
nC
V
GS
= 4.5V
I
D
= 185A, V
DS
=0V, V
GS
= 4.5V
V
DD
= 26V
I
D
= 195A
ns
R
G
= 2.1Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
pF ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
g
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
343
Conditions
MOSFET symbol
D
A
Ãd
1372
showing the
integral reverse
G
S
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
39
–––
ns
–––
41
–––
–––
39
–––
nC
T
J
= 125°C
–––
46
–––
–––
1.7
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
T
J
= 25°C
V
R
= 34V,
T
J
= 125°C
I
F
= 195A
di/dt = 100A/µs
T
J
= 25°C
g
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.013mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
195A, di/dt
≤
841A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
www.irf.com
IRLB3034PbF
100000
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
100000
≤
60µs PULSE WIDTH
Tj = 25°C
TOP
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
10000
≤
60µs PULSE WIDTH
Tj = 175°C
10000
BOTTOM
1000
100
10
2.5V
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
100
2.5V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
10000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1000
T J = 175°C
T J = 25°C
ID = 195A
VGS = 10V
1.5
100
10
1.0
1
VDS = 25V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 4.
Normalized On-Resistance vs. Temperature
5.0
4.5
VGS, Gate-to-Source Voltage (V)
ID= 185A
C, Capacitance (pF)
10000
Ciss
C oss = C ds + C gd
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VDS= 32V
VDS= 20V
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRLB3034PbF
10000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1000
T J = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
LIMITED BY PACKAGE
1msec
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
350
300
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
50
Id = 5mA
48
Limited By Package
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.5
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1200
1000
800
600
400
200
0
ID
TOP
38.9A
65.3A
BOTTOM 195A
2.0
Energy (µJ)
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
www.irf.com
IRLB3034PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.02477
0.08004
0.19057
0.10481
0.000025
0.000077
0.001656
0.008408
τi
(sec)
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
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EAR , Avalanche Energy (mJ)
5
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