PD - 97576
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (ON)
Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
C
IRGP4066DPbF
IRGP4066D-EPbF
V
CES
= 600V
I
C(Nominal)
= 75A
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
V
CE(on)
typ. = 1.70V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
C
E
C
G
TO-247AC
IRGP4066DPbF
C
E
C
G
TO-247AD
IRGP4066D-EPbF
G
Gate
C
Collector
Max.
600
140
90
75
225
300
140
90
300
±20
±30
454
227
-55 to +175
E
Emitter
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
f
f
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.0
–––
40
Units
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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10/08/2010
IRGP4066DPbF/IRGP4066D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.70
2.0
2.1
—
-21
50
1.0
1040
2.23
1.8
—
Max.
—
—
2.10
—
—
6.5
—
—
100
—
3.0
—
±200
Units
V
V/°C
V
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
d
= 150°C
d
= 175°C
d
V
GE
= 0V, I
C
= 2.0mA (25°C-175°C)
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
I
C
= 75A, V
GE
= 15V, T
J
I
C
= 75A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 2.1mA
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 2.1mA (25°C - 175°C)
V
CE
= 50V, I
C
= 75A, PW = 60μs
S
μA
V
nA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 75A
I
F
= 75A, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
150
40
60
2465
2155
4620
50
70
200
60
3870
2815
6685
50
70
240
70
4440
245
130
Max.
225
60
90
3360
3040
6400
70
90
225
80
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 75A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 10Ω, L = 200μH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, T
J
= 25°C
I
C
= 75A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10Ω, L=200μH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH
T
J
= 175°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
V
CC
= 480V, Vp
600V
Rg = 10Ω, V
GE
= +20V to 0V
FULL SQUARE
5
—
—
—
—
470
155
27
—
—
—
—
μs
μJ
ns
A
V
CC
= 400V, Vp
Ã
600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 75A
V
GE
= 15V, Rg = 10Ω, L = 60μH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRGP4066DPbF/IRGP4066D-EPbF
140
120
100
Ptot (W)
300
400
IC (A)
80
60
40
20
0
25
50
75
100
T C (°C)
125
150
175
200
100
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100μsec 10μsec
100
1msec
IC (A)
10
DC
IC (A)
10
1
100
1000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
250
200
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
150
100
50
0
0
2
4
6
150
100
50
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
VCE (V)
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3
IRGP4066DPbF/IRGP4066D-EPbF
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
250
200
ICE (A)
150
100
50
0
0
2
4
6
8
10
IF (A)
150
100
50
0
0.0
1.0
2.0
VF (V)
3.0
4.0
-40°C
25°C
175°C
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 38A
ICE = 75A
12
10
8
6
4
2
0
ICE = 150A
ICE = 38A
ICE = 75A
ICE = 150A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
300
IC, Collector-to-Emitter Current (A)
18
16
14
250
200
150
100
50
0
T J = 25°C
T J = 175°C
VCE (V)
12
10
8
6
4
2
0
5
10
ICE = 38A
ICE = 75A
ICE = 150A
15
VGE (V)
20
4
6
8
10
12
14
16
18
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
4
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IRGP4066DPbF/IRGP4066D-EPbF
12000
10000
8000
Swiching Time (ns)
1000
tdOFF
Energy (μJ)
EON
6000
4000
2000
0
0
25
50
75
IC (A)
100
125
150
100
tF
EOFF
tdON
tR
10
0
50
IC (A)
100
150
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
11000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
10000
9000
Swiching Time (ns)
1000
tdOFF
tF
100
tR
tdON
10
Energy (μJ)
7000
EON
EOFF
3000
5000
1000
0
25
50
Rg (Ω)
75
100
0
20
40
60
RG (Ω)
80
100
120
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
35
RG = 5.0Ω
RG = 10Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
30
30
25
IRR (A)
20
RG = 47Ω
IRR (A)
20
15
100
120
140
160
25
15
RG = 100Ω
10
20
40
60
80
IF (A)
0
20
40
60
80
100
RG (Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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