PD - 97250C
IRGP4068DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068D-EPbF
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
Temperature co-efficient
Ultra-low V
F
Hyperfast Diode
Tight parameter distribution
Lead Free Package
C
V
CES
= 600V
I
C
= 48A, T
C
= 100°C
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.65V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
GC
E
TO-247AC
IRGP4068DPbF
E
GC
TO-247AD
IRGP4068D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 160°C
I
FSM
I
FRM
@Tc = 100°C
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Max.
600
96
48
144
192
Units
V
g
c
df
dg
A
8.0
175
100
±20
±30
330
170
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
W
V
Diode Non Repetitive Peak Surge Current @ T
J
= 25°C
Diode Repetitive Peak Forward Current at tp=10μs
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
2.0
–––
40
Units
°C/W
1
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07/27/09
IRGP4068DPbF/IRGP4068D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
Typ.
—
0.30
1.65
2.0
2.05
—
32
1.0
450
0.96
0.81
—
Max. Units
—
—
2.14
—
—
6.5
—
150
1000
1.05
0.86
±100
nA
V
V
S
μA
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
Ref.Fig
CT6
CT6
4,5,6
8,9,10
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 1.4mA
V
CE
= 50V, I
C
= 48A, PW = 80μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 8.0A
I
F
= 8.0A, T
J
= 150°C
V
GE
= ±20V
V
CE(on)
V
GE(th)
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
8,9,10,11,20
7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Turn-Off Switching Loss
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
95
28
35
1275
145
35
1585
165
45
3025
245
90
Max. Units
140
42
53
1481
176
46
—
—
—
—
—
—
pF
μJ
ns
μJ
ns
nC
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
18
CT1
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
Energy losses include tail
CT4
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 25°C
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH,T
J
= 175°C
Energy losses include tail
CT4
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
=10Ω, L=200μH, T
J
= 175°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +20V to 0V
WF1
17
3
CT2
FULL SQUARE
5
—
—
μs
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
16, CT3
WF2
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
fsw = 20KHz, refer to figure 19.
Sinusoidal half wave, t=10ms.
2
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IRGP4068DPbF/IRGP4068D-EPbF
100
90
80
70
350
300
250
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
T C (°C)
Ptot (W)
60
IC (A)
200
150
100
50
0
0
25
50
75
100 125 150 175 200
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
200
180
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
140
ICE (A)
10
1
10
100
VCE (V)
1000
120
100
80
60
40
20
0
0
2
4
6
IC (A)
8
10
Fig. 3
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
200
180
160
140
ICE (A)
Fig. 4
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
200
180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VCE (V)
100
80
60
40
20
0
0
2
4
6
ICE (A)
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
160
140
120
100
80
60
40
20
0
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
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3
IRGP4068DPbF/IRGP4068D-EPbF
20
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
ICE = 96A
15
20
Fig. 7
- Typ. Diode Forward Voltage Drop
Characteristics
20
18
16
14
20
18
16
14
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
VCE (V)
12
ICE = 24A
ICE = 48A
ICE = 96A
12
10
8
6
4
2
0
ICE = 24A
ICE = 48A
ICE = 96A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
200
180
160
140
T J = 25°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 175°C
6000
5000
4000
EOFF
T J = 175°C
ICE (A)
120
100
80
60
40
20
0
0
5
VGE (V)
10
15
Energy (μJ)
3000
2000
1000
0
0
25
50
IC (A)
75
100
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 12
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
4
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IRGP4068DPbF/IRGP4068D-EPbF
1000
5000
4500
4000
EOFF
Swiching Time (ns)
Energy (μJ)
tdOFF
100
3500
3000
2500
2000
1500
tF
10
0
20
40
IC (A)
60
80
100
1000
0
25
50
75
100
125
Rg (Ω)
Fig. 13
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Fig. 14
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
18
16
14
400
Tsc
350
Isc
300
Current (A)
Time (μs)
12
10
8
6
250
200
150
100
50
8
10
12
14
16
18
VGE (V)
100
tF
10
0
25
50
75
100
125
RG (
Ω
)
4
Fig. 15
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
10000
16
Cies
14
12
10
8
6
4
2
0
0
20
40
60
80
100
Fig. 16
- V
GE
vs. Short Circuit
V
CC
= 400V; T
C
= 25°C
V CES = 300V
V CES = 400V
Capacitance (pF)
1000
Coes
100
Cres
10
VCE (V)
VGE, Gate-to-Emitter Voltage (V)
0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 17
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 18
- Typical Gate Charge vs. V
GE
I
CE
= 48A; L = 600μH
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