PD - 96199A
IRF1324PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
24V
1.2m
:
1.5m
:
353A
195A
c
S
D
G
TO-220AB
IRF1324PbF
G
D
S
Gate
Drain
Max.
353
249
195
1412
300
2.0
± 20
0.46
Source
Units
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
d
f
W
W/°C
V
V/ns
-55 to + 175
°C
300
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãd
e
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
g
270
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
j
Parameter
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
j
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1
09/24/09
IRF1324PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
24
–––
–––
2.0
–––
–––
–––
–––
–––
–––
22
1.2
–––
–––
–––
–––
–––
2.3
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 5.0mA
1.5
mΩ V
GS
= 10V, I
D
= 195A
4.0
V V
DS
= V
GS
, I
D
= 250µA
20
µA V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
250
200
nA V
GS
= 20V
V
GS
= -20V
-200
–––
Ω
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Min. Typ. Max. Units
–––
160
84
49
76
17
190
83
120
7590
3440
1960
4700
4490
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 195A
I
D
= 195A
V
DS
= 12V
V
GS
= 10V
I
D
= 195A, V
DS
=0V, V
GS
= 10V
V
DD
= 16V
I
D
= 195A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 24V
180
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
g
g
ns
pF
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 19V
V
GS
= 0V, V
DS
= 0V to 19V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
i
, See Fig. 11
h
D
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
353
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
T
J
= 25°C
V
R
= 20V,
I
F
= 195A
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/µs
T
J
= 125°C
T
J
= 25°C
Ãd
A
1412
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
46
–––
ns
–––
71
–––
––– 160 –––
nC
––– 430 –––
–––
7.7
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.014mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
195A, di/dt
≤
450 A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
2
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IRF1324PbF
10000
≤
60µs PULSE WIDTH
Tj = 25°C
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10000
≤
60µs PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
ID, Drain-to-Source Current (A)
1000
1000
BOTTOM
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
100
1
4.0V
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
4.0V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 195A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 15V
≤60µs
PULSE WIDTH
0.1
2
3
4
5
6
7
8
9
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 195A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 19V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRF1324PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
1
10
VDS, Drain-to-Source Voltage (V)
100
VSD, Source-to-Drain Voltage (V)
100
TJ = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
VGS = 0V
1.0
DC
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Limited By Package
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
30
ID, Drain Current (A)
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
ID
TOP
44A
83A
BOTTOM 195A
Energy (µJ)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
30
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
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IRF1324PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.0125
0.0822
0.2019
0.2036
τi
(sec)
0.000008
0.000078
0.001110
0.007197
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
0.05
0.10
0.01
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
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5
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