PD - 96227B
IRFH3707PbF
Applications
l
l
l
l
HEXFET
®
Power MOSFET
Synchronous Buck Converter for Computer
Processor Power
Isolated DC to DC Converters for Network and
Telecom
Buck Converters for Set-Top Boxes
System/load switch
V
DSS
30V
R
DS(on)
max
Qg
12.4m @V
GS
= 10V 5.4nC
:
Benefits
l
l
l
l
l
l
l
Low R
DS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
100% Tested for R
G
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
D
D
D
D
S
S
S
G
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
30
± 20
12
9.4
29
18
96
2.8
1.8
0.02
-55 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
f
Junction-to-Ambient
Parameter
Typ.
–––
–––
–––
Max.
7.5
45
31
Units
°C/W
gh
Junction-to-Ambient (t<10s)
h
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
www.irf.com
09/17/10
1
IRFH3707PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.02
9.4
14.5
1.8
-6.2
–––
–––
–––
–––
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
2.0
9.0
11
9.9
5.6
755
171
83
–––
–––
12.4
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
mΩ
V
GS
= 4.5V, I
D
= 9.4A
17.9
2.35
V
V
DS
= V
GS
, I
D
= 25µA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
1.0
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
e
e
100
-100
–––
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 9.4A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 9.4A
See Fig.17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 9.4A
R
G
=1.3Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
13
9.4
Units
mJ
A
nC
nC
Ω
ns
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
27
3.5
A
96
1.0
30
41
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 9.4A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.4A, V
DD
= 15V
di/dt = 200A/µs
e
eÃ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFH3707PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
Tj
≤
60µs PULSE WIDTH
= 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 12A
VGS = 10V
ID, Drain-to-Source Current (A)
10
T J = 25°C
1
TJ = 150°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRFH3707PbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 9.4A
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
14
16
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
10
T = 150°C
J
TJ = 25°C
1msec
1
T A = 25°C
10msec
1
VGS = 0V
Tj = 150°C
Single Pulse
0.1
0
1
10
100
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFH3707PbF
12
10
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
2.5
2.0
ID = 25µA
1.5
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
