PD - 97521
IRF9388PbF
HEXFET
®
Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@V
GS
= -10V)
-30
±25
11.9
-12
V
V
mΩ
A
6
6
6
*
'
'
'
'
I
D
(@T
A
= 25°C)
SO-8
Applications
•
Adaptor Input Switch for Notebook PC
Features and Benefits
Features
Resulting Benefits
25V V
GS
max
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Direct Drive at High V
G S
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9388PbF
IRF9388TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
4000
Tape and Reel
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-30
± 25
-12
-9.6
-96
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes
through
are on page 2
www.irf.com
1
6/4/10
IRF9388PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.021
8.5
10
-1.8
-5.8
–––
–––
–––
–––
–––
18
35
5.3
8.5
15
19
57
80
66
1680
350
220
Conditions
h
Total Gate Charge
h
h
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
h
h
–––
V V
GS
= 0V, I
D
= -250μA
––– V/°C Reference to 25°C, I
D
= -1mA
V
GS
= -20V, I
D
= -12A
–––
mΩ
V
GS
= -10V, I
D
= -12A
11.9
-2.4
V
V
DS
= V
GS
, I
D
= -25μA
––– mV/°C
V
DS
= -24V, V
GS
= 0V
-1.0
μA
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-150
V
GS
= -25V
10
μA
V
GS
= 25V
10
–––
S V
DS
= -10V, I
D
= -9.6A
–––
nC V
DS
= -15V, V
GS
= -4.5V, I
D
= - 9.6A
V
GS
= -10V
52
nC V
DS
= -15V
–––
I
D
= -9.6A
–––
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Ω
V
DD
= -15V, V
GS
= -4.5V
I
D
= -1.0A
R
G
= 6.8Ω
See Figs. 20a &20b
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
Max.
120
-9.6
e
ns
pF
Avalanche Characteristics
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
d
Units
mJ
A
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
51
35
-2.5
A
-96
-1.2
76
53
Typ.
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
G
S
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
di/dt = 100A/μs
Max.
20
50
e
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
e
f
g
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 2.6mH, R
G
= 25Ω, I
AS
= -9.6A.
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRF9388PbF
100
100
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
10
TOP
1
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
10
TOP
1
-2.5V
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
0.1
-2.5V
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID, Drain-to-Source Current (A)
10
1.4
ID = -12A
V GS = -10V
TJ = 150°C
1
1.2
TJ = 25°C
0.1
1.0
V DS = -10V
≤
60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
6.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = C ds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
-V GS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= -9.6A
V DS= -24V
V DS= -15V
V DS= -6.0V
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
1
10
-V DS, Drain-to-Source Voltage (V)
100
0
8
16
24
32
40
48
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF9388PbF
100
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
TJ = 150°C
10
-ID, Drain-to-Source Current (A)
-ISD, Reverse Drain Current (A)
100
1msec
10
10msec
1
TJ = 25°C
1
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
-V SD, Source-to-Drain Voltage (V)
0.1
0.1
TA = 25°C
Tj = 150°C
Single Pulse
1
DC
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
12
10
-ID, Drain Current (A)
-V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.5
8
6
4
2
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
2.0
ID = -25μA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
1
10
100
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF9388PbF
RDS(on), Drain-to -Source On Resistance (m
Ω
)
ID = -12A
40
RDS(on), Drain-to -Source On Resistance ( mΩ)
50
60
50
40
30
20
10
V GS = -10V
0
0
10
20
30
40
50
60
-ID, Drain Current (A)
V GS = -4.5V
30
20
TJ = 125°C
10
TJ = 25°C
0
0
5
10
15
20
-V GS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
500
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical On-Resistance vs. Drain Current
1000
400
300
Single Pulse Power (W)
ID
TOP
-2.3A
-3.3A
BOTTOM -9.6A
800
600
200
400
100
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 16.
Typical Power vs. Time
D.U.T
*
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
•
•
•
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor
Curent
Inductor
Current
Ripple
≤
5%
I
SD
*
Reverse Polarity of D.U.T for P-Channel
*
V
GS
= 5V for Logic Level Devices
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Fig 17.
Diode Reverse Recovery Test Circuit
for P-Channel HEXFET
®
Power MOSFETs
5
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